Fifth International Conference on Hot Carriers in Semiconductors (Boston, Massachusetts, 7/20-24/87)

这次会议是在早些时候举行的四次国际会议(1973年摩德纳会议、1977年丹顿会议、1981年蒙彼利埃会议和1985年因斯布鲁克会议)之后举行的。它将集中在关键的实验和理论物理以及与半导体中非平衡热载流子传输相关的固态电子学问题。它将涵盖弹道传输、过冲现象、电场和磁场中的量子传输、新型差动电阻器件行为、超小型、超快半导体器件以及与热载流子物理相关的一般固态动力学考虑等主题。本次会议旨在为深入讨论半导体和半导体器件中非平衡和热载流子现象的关键实验和理论方面提供一个论坛。

The Conference follows the four International conferences held earlier (Modena 1973, Denton 1977, Montpellier 1981 and Innsbruck 1985). It will focus on the key experimental and theoretical physics as well as solid state electronics issues relevant to non-equilibrium, hot carrier transport in semiconductors. It will encompass such topics as ballistic transport, overshoot phenomena, quantum transport in both electric and magnetic fields, novel differential resistance device behavior, ultra-small, ultra-fast semiconductor devices and general solid-state dynamical considerations relevant to hot carrier physics. This conference is intended to provide a forum for intensive discussions on key experimental and theoretical aspects of non- equilibrium and hot carrier phenomena in semiconductors and semiconductor devices.