Engineering Reseach Equipment Grant: Picosecond Source of Synchronized Infrared and Visible Light

工程研究设备资助：皮秒同步红外和可见光光源

• 批准号: 8805570
• 负责人: John Bowers
• 金额: $ 5.8万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-08-01 至 1990-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8805570&HistoricalAwards=false
• 关键词: Engineering; Reseach; Equipment; Grant; Picosecond

The proposed equipment will be the basis of an electro-optic sampling system for the picosecond characterization of very high speed photodetectors, modulators and superconducting striplines and associated devices, such as superconducting resonators. The high speed dynamics of gain switched and mode locked semiconductor lasers will be characterized. The short high power pulses from this laser will be used to study the high speed transport and optical characteristics of compound semiconductors, particularly superlattices and quantum confined structures in the A1GaAs and GaInAsP material systems. Finally, this laser will be used for optical pumping and characterization of semiconductor lasers, particularly surface emitting lasers and high speed modulation doped multiquantum well lasers.

该提议的设备将成为电光采样系统的基础，用于极高速光电探测器、调制器和超导带状线以及超导谐振器等相关设备的皮秒表征。本文将描述增益开关和锁模半导体激光器的高速动力学特性。该激光器产生的高功率短脉冲将用于研究化合物半导体的高速输运和光学特性，特别是A1GaAs和GaInAsP材料体系中的超晶格和量子限制结构。最后，该激光器将用于半导体激光器的光泵浦和表征，特别是表面发射激光器和高速调制掺杂多量子阱激光器。