RUI: Resonant Raman Scattering as a Tool for Studying Point Defects in III-V Semiconductors (Materials Research)

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They plan on conducting a series of experiments that use Raman scattering to provide microscopic information concerning defects in III-V semiconductors. Several of the experiments involve using resonant Raman scattering (RRS). This has two main benefits: 1) There will be an enhancement of the Raman signal strength thus increasing the sensitivity of the technique to lower defect concentrations and 2) RRS allows a connection to be made between specific electronic levels associated with defects and the observed local vibrational modes. This work is important because it will look at problems that are currently of great importance from both a fundamental and an applications point of view (e.g. investigation of the resonant donor state associated with the DX center in gallium arsenide and aluminum gallium arsenide.) The proposed work will also help develop and extend the technique of RRS for studying defects in semiconductors. They also plan to use Raman scattering to study the influence of point defect on the interdiffusion of gallium and aluminum across the gallium arsenide/aluminum gallium arsenide interface. This is work that is important both because of the light it promises to shed on the physics of the interdiffusion process in general and because interdiffusion at this interface is of great practical importance for making quantum well devices in which the carriers are confined in more than one dimension.