RUI: Resonant Raman Scattering as a Tool for Studying Point Defects in III-V Semiconductors (Materials Research)

RUI：共振拉曼散射作为研究 III-V 半导体点缺陷的工具（材料研究）

• 批准号: 8808143
• 负责人: Robert Berg
• 金额: $ 10.45万
• 依托单位: Wellesley College
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-09-01 至 1991-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8808143&HistoricalAwards=false
• 关键词: RUI; Resonant; Raman; Scattering; Tool

They plan on conducting a series of experiments that use Raman scattering to provide microscopic information concerning defects in III-V semiconductors. Several of the experiments involve using resonant Raman scattering (RRS). This has two main benefits: 1) There will be an enhancement of the Raman signal strength thus increasing the sensitivity of the technique to lower defect concentrations and 2) RRS allows a connection to be made between specific electronic levels associated with defects and the observed local vibrational modes. This work is important because it will look at problems that are currently of great importance from both a fundamental and an applications point of view (e.g. investigation of the resonant donor state associated with the DX center in gallium arsenide and aluminum gallium arsenide.) The proposed work will also help develop and extend the technique of RRS for studying defects in semiconductors. They also plan to use Raman scattering to study the influence of point defect on the interdiffusion of gallium and aluminum across the gallium arsenide/aluminum gallium arsenide interface. This is work that is important both because of the light it promises to shed on the physics of the interdiffusion process in general and because interdiffusion at this interface is of great practical importance for making quantum well devices in which the carriers are confined in more than one dimension.

他们计划利用拉曼光谱进行一系列实验 提供有关缺陷的微观信息的散射 III-V半导体 几个实验涉及 使用共振拉曼散射（RRS）。 这有两个主要的 优点：1）将增强拉曼信号 强度，从而增加了该技术的灵敏度， 较低的缺陷浓度和2）RRS允许连接 在与缺陷相关的特定电子水平之间进行 和观察到的局部振动模式。 这项工作很重要 因为它将着眼于当前最重要的问题， 从根本和应用的角度来看， 视图（例如，相关共振施主态的研究 DX中心是砷化镓和铝镓 砷化物。） 拟议的工作还将有助于发展和扩大 研究半导体中缺陷的RRS技术。 他们还计划使用拉曼散射来研究 镓和铝相互扩散的点缺陷 砷化镓/砷化铝镓界面。 这 这项工作之所以重要， 来阐述一般的相互扩散过程的物理学 因为在这个界面上的相互扩散是很大的， 对于制造量子阱器件的实际重要性， 载流子被限制在不止一个维度上。