Research Initiation: Mapping Process Chemistry for Silicon PECVD

在从氦/氢化硅等离子体中沉积硅的过程中，在平行板等离子体增强化学气相沉积(PECVD)反应器中绘制了物种浓度图。还将测量薄膜的性能。目的是研究工艺变量、气体浓度和非晶态/晶态转变之间的关系，并确定可以进行反应堆建模的动力学。PECVD是一种用于制造微电子制造的薄膜的重要新兴技术，但仅限于产品质量、再现性和新薄膜开发的经验设置。气相(等离子体相)化学占主导地位，如果PECVD过程的动力学是定量可预测的，那么现有的和新的PECVD过程可以得到改进。如上所述的空间分辨数据是实现这一目标的关键先决条件。

Species concentrations are mapped within a parallel-plate, plasma-enhanced chemical vapor deposition (PECVD) reactor during the deposition of silicon from a helium/silicon hydride plasma. Film properties will also be measured. The purposes are to examine the relationship among process variables, gas concentrations, and the amorphous/crystalline transition, and also to determine kinetics that could permit reactor modeling. PECVD is an important emerging technology for creating thin films for microelectronics manufacturing, but is limited to empirical settings for product quality, reproducibility, and new-film development. Gas-phase (plasma-phase) chemistry dominates, and if the kinetics were quantitatively predictable for PECVD processes, then existing and new PECVD processes could be improved. Spatially resolved data such as described above are critical prerequisites for achieving such a goal.