Research Initiation: Mapping Process Chemistry for Silicon PECVD

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Species concentrations are mapped within a parallel-plate, plasma-enhanced chemical vapor deposition (PECVD) reactor during the deposition of silicon from a helium/silicon hydride plasma. Film properties will also be measured. The purposes are to examine the relationship among process variables, gas concentrations, and the amorphous/crystalline transition, and also to determine kinetics that could permit reactor modeling. PECVD is an important emerging technology for creating thin films for microelectronics manufacturing, but is limited to empirical settings for product quality, reproducibility, and new-film development. Gas-phase (plasma-phase) chemistry dominates, and if the kinetics were quantitatively predictable for PECVD processes, then existing and new PECVD processes could be improved. Spatially resolved data such as described above are critical prerequisites for achieving such a goal.