Engineering Research Equipment Grant: Plasma-Enhanced Chemical Vapor Deposition Reactor

工程研究设备资助：等离子体增强化学气相沉积反应器

• 批准号: 8805703
• 负责人: Phillip Westmoreland
• 金额: $ 2.6万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-05-01 至 1990-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8805703&HistoricalAwards=false
• 关键词: Engineering; Research; Equipment; Grant; Plasma

Molecular-beam mass spectrometry through the wafer surface is used for the first time in plasma-enhanced chemical vapor deposition (PECVD), giving identification and measurement of stable species, free radicals, and ions. The PECVD reactor effectively resembles commercial reactors used to fabricate microelectronic films, but it must be specially designed to accommodate this unique instrumentation. Such measurements will identify and quantify key reactive species, information that is critically needed to determine the chemical mechanisms of PECVD. Currently, mechanisms are being developed from sparse literature data and from theoretical predictions. Data from this apparatus then will contribute to more accurate models. Initial systems of interest are SiH4 plasmas depositing amorphous Si, and SiH4/O2 plasmas depositing SiO2.

通过晶片表面的分子束质谱是 首次用于等离子体增强化学气相 等离子体增强化学气相沉积（PECVD），提供识别和测量 稳定物种、自由基和离子。 pecvd反应器 类似于用于制造 微电子薄膜，但它必须专门设计， 适应这种独特的仪器。 这些测量将确定和量化关键反应性 物种，信息是迫切需要确定 PECVD的化学机制 目前，正在建立机制， 从稀疏的文献数据和理论 预测。来自该装置的数据将有助于 更准确的模型。 感兴趣的初始系统是SiH 4 等离子体沉积非晶硅和SiH 4/O2等离子体沉积 二氧化硅。