Growth and Evaluation of Germanium-Silicon Heterojunctions for Electronic Devices

PI将探索利用锗硅合金的异质结构的电子器件潜力。要进行的研究将允许评估锗硅异质结构的潜力，特别是在异质结双极晶体管中的应用。使用先进的气相外延进行薄膜生长的基础研究，包括确定相应生长的临界厚度。掺杂效应和氧化和扩散的过程，尚未很好地理解也将进行研究。突然的多层结构将会成长，各种各样的分析技术将被用于电影的表征。特别是，将进行异质结双极晶体管结构的生长和评估，这可能是非常重要的高速开关器件。在这个项目中进行的研究也将允许对涉及使用掺杂原子片的未来先进异质结概念进行调查。这些研究将促进对异质结的一般理解，并将导致对重要器件的更好理解。

The PI will explore the electronic device potential of heterostructures using germanium-silicon alloys. The investigations to be performed will permit evaluation of the potential of germanium- silicon heterostructures, in particular for application to heterojunction bipolar transistors. Basic studies of film growth using advanced gas phase epitaxy, including determination of critical thickness for commensurate growth will be used. Doping effects and the processes of oxidation and diffusion which are not yet well understood will also be examined. Abrupt multilayered structures will be grown and a variety of analytic techniques will be brought to bear for film characterization. In particular, will be performed the growth and evaluation of heterojunction bipolar transistor structures which may be of great importance as high speed switching devices. Research performed in this project will also permit the investigating of the future advanced heterojunction concepts which involve the use of sheets of dopant atoms. These studies will advance the understanding of heterojunctions in general and will lead to improved understanding of important devices.