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Sub-Picosecond Studies of Opto-Electronic Devices

Sub-Picosecond Studies of Opto-Electronic Devices
光电器件的亚皮秒研究
批准号:
8815834
负责人:
Erich Ippen
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing grant
财政年份:
1989
资助国家:
美国
项目状态:
已结题
起止时间:
1989-03-01 至 1993-02-28

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中文摘要
翻译
这些研究的一般目的是为了更好地了解控制半导体薄膜和有源波导中超短脉冲的产生、传输和非线性相互作用的参数。这些研究的结果有望为未来高速光通信和信号处理设备的设计提供便利。拟议的工作主要是试验性的;一个重要方面是开发新的飞秒诊断技术。具体目标分三节概述。(A)GaAlAs和InGaAsP半导体激光器亚皮秒增益和吸收非线性的波长可调谐研究。(B)有源半导体光波导器件折射率的动态变化。(C)改进了对长波体制的飞秒诊断。
英文摘要
The general purpose of these studies is to obtain a better understanding of parameters governing ultra-short pulse generation, propagation, and nonlinear interaction in semiconductor thin films and active waveguides. Results of such studies are expected to facilitate the design of future high-rate optical communication and signal processing devices. Topics of particular current interests are: ultrafast gain and loss dynamics in diode lasers, limitations on pulse formation and propagation in semiconductor waveguides, femtosecond carrier dynamics in InGaAs and InGaAsP, and nonlinear coupling phenomena in active waveguides. The proposed work is primarily experimental; and an important aspect is the development of novel femtosecond diagnostic techniques. Specific goals are outlined in three sections. (a) Wavelength-tunable studies of sub-picosecond gain and absorption nonlinearities in GaAlAs and InGaAsP diode lasers. (b) Dynamic index of refraction changes in active semiconductor wave-guide devices. (c) Improved femtosecond diagnostics for the long-wavelength regime.
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Picosecond Opto-Electronic Device Studies
Picosecond Opto-Electronic Device Studies
Engineering Specialized Research Equipment: Picosecond Device Diagnostics
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