Quantum Transport of Femtosecond Photoexcited Carriers in Semiconductor Hetero-Structures of GaAs and Si

GaAs 和 Si 半导体异质结构中飞秒光激发载流子的量子输运

• 批准号: 8819651
• 负责人: Robert Alfano
• 金额: $ 22.37万
• 依托单位: CUNY City College
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-05-01 至 1993-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8819651&HistoricalAwards=false
• 关键词: Quantum; Transport; Femtosecond; Photoexcited; Carriers

Picosecond time resolved photoluminescence experiments may be used to probe GaAs/Si interface quality and to study the effects of the built- in strain in GaAs and related structures on various material properties and carrier and phonon dynamic processes which are crucial to the operation of high speed devices. So far, no relevant picosecond studies have been reported. The PI proposes a research plan to investigate the quality of GaAs and carrier dynamics in GaAs quantum well structures grown on Si by time resolved photoluminescence measurements.

皮秒时间分辨光致发光实验可用于探测GaAs/Si界面质量，研究GaAs及相关结构中内置应变对各种材料性能以及对高速器件运行至关重要的载流子和声子动态过程的影响。到目前为止，还没有相关的皮秒研究报道。PI提出了一项研究计划，通过时间分辨光致发光测量来研究在Si上生长的GaAs量子阱结构中的GaAs质量和载流子动力学。