Quantum Transport of Femtosecond Photoexcited Carriers in Semiconductor Hetero-Structures of GaAs and Si

皮秒时间分辨光致发光实验可用于探测GaAs/Si界面质量，研究对高速器件运行至关重要的各种材料性质和载流子、声子动力学过程中的内在应变对材料性质的影响。到目前为止，还没有相关的皮秒研究报告。PI提出了一项研究计划，通过时间分辨光致发光测量来研究生长在硅上的GaAs量子阱结构中的GaAs质量和载流子动力学。

Picosecond time resolved photoluminescence experiments may be used to probe GaAs/Si interface quality and to study the effects of the built- in strain in GaAs and related structures on various material properties and carrier and phonon dynamic processes which are crucial to the operation of high speed devices. So far, no relevant picosecond studies have been reported. The PI proposes a research plan to investigate the quality of GaAs and carrier dynamics in GaAs quantum well structures grown on Si by time resolved photoluminescence measurements.