Unsymmetrical Tellurides as Novel Metallic-Organic Chemical Vapor Deposition (MOCVD) Reagents for Tellurium Alloys

该项目是在材料化学的一般领域， 有机金属化学的分支。 这件事的主旨是 实验活动是新的合成和表征 分子作为更有效的前体，用于制造薄 金属有机化学气相沉积金属膜器件 （MOCVD）技术。 不对称碲化物（RTeR '）代表 新的替代非最佳源试剂目前在 使用. 这些不对称的碲化物 挥发性，同时保持不稳定的碲-碳键， 适当选择R和R'基团。 的技术途径 本阶段的活动是合成和表征 一系列的五种式RTeR'化合物， 文学程序。 这五种化合物将被热解， 识别的产品。 碳基材料与 碲基自由基对分解速率和生长的影响 温度将被研究。 低的生长温度对于MOCVD的突变是必不可少的。 由碲化镉汞制造的异质结器件。 第一阶段的成功将导致确定新的、低成本的 用于碲合金的MOCVD的温度源试剂。 在成功完成第一阶段研究后， 这些试剂将被证明在制造 汞镉碲薄膜在随后的第二阶段的努力。

This project is in the general area of materials chemistry and in the subfield of organometallic chemistry. The thrust of this experimental activity is the synthesis and characterization of new molecules as more efficient precursors for the fabrication of thin metal film devices by metalorganic chemical vapor deposition (MOCVD) technology. Unsymmetrical tellurides (RTeR') represent a novel alternative to the non-optimal source reagents currently in use. These unsymmetrical tellurides will have increased volatility while maintaining labile tellurium-carbon bonds by appropriate choice of the R and R' groups. The technical approach in this Phase activity is the synthesis and characterization of a series of five compounds of formula RTeR' by modifications of literature procedures. These five compounds will be pyrolized and the products identified. The relative role of carbon-based vs. tellurium-based radicals on the decomposition rate and growth temperature will be studied. Low growth temperatures are essential for the MOCVD of abrupt heterojunction devices fabricated from mercury cadmium telluride. Success in Phase I will result in the identification of new, low temperature source reagents for the MOCVD of tellurium alloys. Upon successful completion of this Phase I research, the utility of these reagents will be demonstrated in the fabrication of mercury cadmium telluride films in a subsequent Phase II effort.