Unsymmetrical Tellurides as Novel Metalorganic Chemical Vapor Deposition Reagents for Tellurium Alloys

这个小型企业创新研究(SBIR)第二阶段项目是在材料化学的一般领域，以及金属有机化学气相沉积(MOCVD)的子领域。这项活动的目标是开发用于制造碲合金薄膜的挥发性MOCVD试剂。碲化镉汞(MCT)作为被动红外探测器材料具有重要的潜在应用前景。MCT的MOCVD需要开发具有更高的挥发性和更低的生长温度的新的碲元素源试剂。在国家自然科学基金资助的第一阶段研究期间，通过一种新的配体交换反应合成了一类新的化合物--三氟甲基(烷基)碲化物。研究表明，这些化合物的挥发度和分解温度与目前可用的最佳试剂相当。在这个第二阶段的研究中，这些化合物的大规模合成将被开发出来，它们将作为Te源试剂用于生长CdTe薄膜。薄膜的物理和电学性能将被确定。同时，还将进一步阐明三氟甲基(烷基)碲化物的热解机理和配体交换反应的机理。这一信息与薄膜生长研究相结合，应该可以确定最佳来源试剂，并开发大规模、高纯度的该化合物的合成。

This Small Business Innovation Research (SBIR) Phase II project is in the general area of materials chemistry and in the subfield metalorganic chemical vapor deposition (MOCVD). The goal of this activity is the development of volatile MOCVD reagents for use in the fabrication of tellurium alloy thin films. Mercury cadmium telluride (MCT) has important potential applications as a material for passive infrared detectors. MOCVD of MCT necessitates development of new tellurium element source reagents with increased volatility and lower growth temperatures. During the tenure of Phase I research under NSF grant ISI-8860518, a new class of compounds, trifluoromethyl(alkyl)tellurides, was synthesized via a novel ligand exchange reaction. These compounds were shown to have a significantly higher volatility and comparable decomposition temperatures to the best reagents currently available. In this Phase II study, large scale syntheses of these compounds will be developed and they will be used as Te source reagents for the growth of CdTe films. The physical and electrical properties of the films will be determined. Simultaneously, further work will be done to elucidate the pyrolysis mechanisms of the trifluoromethyl(alkyl)tellurides and the mechanism of the ligand exchange reaction. This information, combined with the film growth studies, should allow determination of the optimum source reagent and the development of a large scale, high purity synthesis of that compound.