Dynamic Studies of Reactions at Semiconductor Interfaces

本研究的目的是研究半导体材料，特别是金属-半导体界面中的相互扩散和界面反应。重点是正在进行的与这些反应相关的原子行为的新见解，包括结晶，晶粒生长和位错行为。主要的分析技术是动态、原位高分辨率电子显微镜，而x射线衍射、俄歇电子能谱、卢瑟福后向散射将提供补充信息。研究的重点是深入了解金属与半导体的反应，以及从界面形成开始的反应过程中半导体内部的反应。

The goal of the investigation is to study the interdiffusion and interface reactions in semiconductor materials, particularly metal-semiconductor interfaces. The emphasis in ongoing new insight into the atomic behavior associated with such reactions to include crystallization, grain growth, and dislocation behavior. The primary analytical technique is dynamic, in-situ high resolution electron microscopy, and x-ray diffraction, Auger electron spectroscopy, Rutherford backscattering will provide complementary information. The research concentrates upon both the thorough understanding of the reactions of metals with semiconductors as well as the reactions within the semiconductors as the reaction progresses from the very beginning of the formation of the interface.