Electron Transport on Hydrogen

研究了无序对非简并二维电子气体输运性质的影响。研究的主要重点将是表征从低载流子密度到高载流子密度时的强无序极限（即强局域化制度），在那里电子气体已知会凝固成维格纳晶体。在几个数量级上控制电子密度的能力，使人们有独特的机会在给定的无序水平上“开启”相互作用效应。这项工作将通过探测参数空间的区域对定位领域做出重要贡献，这些区域通常是被更广泛研究的半导体和金属系统所无法接近的。本文还将研究无序对氦-氢沉积薄膜超流密度的影响。这项工作将首次在具有良好特征的（例如，从电子电导率测量）和故意无序的表面上提供超流体的开始测量。

The effects of disorder on the transport properties of a non- degenerate two dimensional electron gas will be studied. The primary emphasis of the research will be to characterize the strong disorder limit (i.e., strong localization regime) as one goes from low carrier densities to high carrier densities, where the electron gas in known to solidify into a Wigner crystal. The ability to control the electron density over several orders of magnitude gives one the unique opportunity to "turn on" interaction effects at a given level of disorder. The work will represent an important contribution to the field of localization by probing regions of parameter space that are generally inaccessible to the much more widely studied semiconducting and metallic systems. The effects of disorder on the superfluid density in thin films of helium deposited on hydrogen will also be studied. The work will provide the first measurements of the onset of superfluidity on well characterized (i.e., from electron conductivity measurements) and purposely disordered surfaces.