Electron Transport on Hydrogen

氢上的电子传输

• 批准号: 8911233
• 负责人: Philip Adams
• 金额: $ 9万
• 依托单位: Louisiana State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-04-01 至 1992-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8911233&HistoricalAwards=false
• 关键词: Electron; Transport; Hydrogen

The effects of disorder on the transport properties of a non- degenerate two dimensional electron gas will be studied. The primary emphasis of the research will be to characterize the strong disorder limit (i.e., strong localization regime) as one goes from low carrier densities to high carrier densities, where the electron gas in known to solidify into a Wigner crystal. The ability to control the electron density over several orders of magnitude gives one the unique opportunity to "turn on" interaction effects at a given level of disorder. The work will represent an important contribution to the field of localization by probing regions of parameter space that are generally inaccessible to the much more widely studied semiconducting and metallic systems. The effects of disorder on the superfluid density in thin films of helium deposited on hydrogen will also be studied. The work will provide the first measurements of the onset of superfluidity on well characterized (i.e., from electron conductivity measurements) and purposely disordered surfaces.

研究了无序对非线性系统输运性质的影响。 简并二维电子气将被研究。 的 研究的主要重点将是描述 强无序极限（即，强本地化制度）作为一个 从低载流子密度到高载流子密度，其中 已知电子气固化成维格纳晶体。 的 能够控制电子密度超过几个数量级， 规模给人一个独特的机会，“打开” 给定无序水平下的相互作用效应。 这项工作将 代表了对本地化领域的重要贡献 通过探测通常 更广泛研究的半导体和 金属系统 无序对超流体的影响 沉积在氢上的氦薄膜的密度也将 被研究。 这项工作将提供第一次测量的 在充分表征的（即，从电子 电导率测量）和故意无序的表面。