Presidential Young Investigators Award: Physics and Engineering of Superconductor and Semiconducting Devices

总统青年研究员奖：超导和半导体器件物理与工程

• 批准号: 8958405
• 负责人: Tuviah Schlesinger
• 金额: $ 25.95万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-09-01 至 1995-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8958405&HistoricalAwards=false
• 关键词: Presidential; Young; Investigators; Award; Physics

Often the design of new devices and the optimization of device geometries can limit the rate of development of a new technology. Computer models for devices can help speed up this process but these are not well established for gallium arsenide. The PI will establish a research effort, directed at developing physically based computer models for GaAs devices. Such models will allow for the more efficient evaluation and design of new device structures. Our initial approach will be to refine process modeling software and adapt it to GaAs device fabrications processes. This work will form the basis for the device modeling software, initially focussed on MESFETS, which will be used to arrive at physically based closed form descriptions of the device characteristics which software such as SPICE might employ.

通常，新设备的设计和设备的优化 几何形状会限制新技术的发展速度。 设备的计算机模型可以帮助加快这一过程，但这些 对于砷化镓还没有很好地建立。 PI将建立 一项研究工作，旨在开发基于物理的计算机 GaAs器件的模型。 这种模式将允许更多的 新器件结构的有效评估和设计。 我们最初 方法将是完善过程建模软件，并使其适应 GaAs器件制造工艺。 这项工作将成为 器件建模软件，最初专注于MESFET， 将被用来达到基于物理的封闭形式的描述 SPICE等软件可能使用的设备特性。