Presidential Young Investigators Award: Physics and Engineering of Superconductor and Semiconducting Devices

通常，新器件的设计和器件几何形状的优化会限制新技术的发展速度。设备的计算机模型可以帮助加速这一过程，但这些还没有很好地建立在砷化镓上。PI将建立一项研究工作，旨在为GaAs设备开发基于物理的计算机模型。这样的模型将允许更有效的评估和设计新的设备结构。我们最初的方法将是改进过程建模软件，并使其适应GaAs器件制造过程。这项工作将构成器件建模软件的基础，最初侧重于mesfet，这将用于获得诸如SPICE等软件可能采用的器件特性的基于物理的封闭形式描述。

Often the design of new devices and the optimization of device geometries can limit the rate of development of a new technology. Computer models for devices can help speed up this process but these are not well established for gallium arsenide. The PI will establish a research effort, directed at developing physically based computer models for GaAs devices. Such models will allow for the more efficient evaluation and design of new device structures. Our initial approach will be to refine process modeling software and adapt it to GaAs device fabrications processes. This work will form the basis for the device modeling software, initially focussed on MESFETS, which will be used to arrive at physically based closed form descriptions of the device characteristics which software such as SPICE might employ.