High Temperature Superconductors

我们将研究溅射沉积的高临界温度(Tc77K)超导薄膜。要研究的特殊结构将是一种类似管理信息系统的结构，由半导体衬底(Si)和隧道氧化物(30-80A厚)组成，然后是超导体的沉积层。通过氧化物进入超导体的隧道电流将作为超导材料中电子态密度的探测器。将解决这些薄膜材料中的各向异性电流流动，并将特别关注有利于平行于薄膜的导电层对准的工艺条件。这些材料的磁性测量也将被用来研究薄膜的各向异性特性。

Sputter deposited superconducting thin films of high critical temperature (Tc 77 K) will be investigated. The particular structure to be studied will be an MIS-like structure consisting of a semiconducting substrate (Si) and a tunnel oxide (30 - 80 A thick), followed by a deposited layer of the superconductor. Tunneling currents through the oxide and into the superconductor will act as a probe of the electronic density of states in the superconducting material. The anisotropic current flows in these thin film materials will be addressed and particular attention will be paid to processing conditions which favor the alignment of conducting layers parallel to the thin film. Measurements of the magnetic properties of these materials will also be employed to study the anisotropic properties of the films.