Surface and Inorganic Chemistry of Compound Semiconductor Materials

化合物半导体材料的表面和无机化学

• 批准号: 9007166
• 负责人: Alan Cowley
• 金额: $ 53.4万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-09-01 至 1994-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9007166&HistoricalAwards=false
• 关键词: Surface; Inorganic; Chemistry; Compound; Semiconductor

This award is made in the Materials Chemistry and Chemical Processing Initiative in support of the collaborative research of Professors Cowley, Jones, Ekerdt and White at the University of Texas/Austin. Joint funding is provided by the Divisions of Chemistry, Materials Research, and Chemical and Thermal Systems. The principal objective is to achieve precise control of the physical and electronic properties of epitaxially grown semiconductor thin films through the rational design and chemical synthesis of single-source precursors. Novel single-source precursors will be prepared and their structures and stabilities determined. Thin films will be grown by chemical beam epitaxy and the adsorption, decomposition and surface desorption kinetics of the precursors will be studied by advanced surface science techniques. The relationship between precursor structure, surface reactions and materials properties will be explored in order to develop an atomistic description of how the precursors react at the interface and how film growth progresses.

该奖项是在材料化学和化学 支持合作研究的加工倡议 考利、琼斯、埃克特和白色教授的 德克萨斯州/奥斯汀联合供资由以下各司提供： 化学，材料研究，化学和热 系统.主要目标是实现精确控制 的物理和电子性能的外延生长 通过合理的设计， 单一来源前体的化学合成。 将制备新型单源前体， 结构和稳定性测定。薄膜将生长 通过化学束外延和吸附，分解， 研究了前驱体的表面脱附动力学 先进的表面科学技术。的关系 前体结构、表面反应和材料之间 将探索性质以开发原子论 前体如何在界面处反应的描述， 薄膜生长的过程