Surface and Inorganic Chemistry of Compound Semiconductor Materials

这个奖项是在材料化学和化学处理计划中颁发的，以支持德克萨斯大学奥斯汀分校的考利、琼斯、埃克特和怀特教授的合作研究。联合资金由化学、材料研究、化学和热系统部门提供。主要目的是通过合理设计和化学合成单源前驱体，实现对外延生长半导体薄膜的物理和电子特性的精确控制。将制备新的单源前体，并确定其结构和稳定性。采用化学束外延法生长薄膜，采用先进的表面科学技术研究前驱体的吸附、分解和表面脱附动力学。将探讨前驱体结构、表面反应和材料性质之间的关系，以便对前驱体如何在界面处反应和薄膜生长过程进行原子描述。

This award is made in the Materials Chemistry and Chemical Processing Initiative in support of the collaborative research of Professors Cowley, Jones, Ekerdt and White at the University of Texas/Austin. Joint funding is provided by the Divisions of Chemistry, Materials Research, and Chemical and Thermal Systems. The principal objective is to achieve precise control of the physical and electronic properties of epitaxially grown semiconductor thin films through the rational design and chemical synthesis of single-source precursors. Novel single-source precursors will be prepared and their structures and stabilities determined. Thin films will be grown by chemical beam epitaxy and the adsorption, decomposition and surface desorption kinetics of the precursors will be studied by advanced surface science techniques. The relationship between precursor structure, surface reactions and materials properties will be explored in order to develop an atomistic description of how the precursors react at the interface and how film growth progresses.