Engineering Research Equipment Grant: Laser-Ablation and Crystal Growth and Characterization of Quantum

多目标装置将被 用于外延生长， 半导体、磁性的 半导体、磁性金属 薄膜和高温超导体。 我们的具体内容 调查是：（1）评估 新半导体成长 按顺序分层结构 原子单层这可能 成为一种全新的类型 化学.技术 重要材料如InGaAs 2 而GaAl 3As 4不会有合金- 相关问题，如承运人 散射与能级 加宽(2)生长研究 有序磁II-VI族 半导体大幅增强 的磁化率是 对于Cd 3 MnTe 4预期， 对于像 磁可调谐激光器， 法拉第旋转器。(3)评价 激光烧蚀技术用于p-和 II-VI族半导体的n掺杂。 p-n结才刚刚开始 成为可行的碲化镉和 可能是ZnSe。 (4)叠加薄 磁性金属薄膜可能导致 高密度磁 录制. (5)外延生长 和高Tc的薄膜层 超导体原位沉积 绝缘屏障的存在会导致 以改善隧道结。

A multiple target apparatus will be built for epitaxial growth of semiconductors, magnetic semiconductors, magnetic metal films, and high Tc superconductors. Specific elements of our investigation are: (1) Evaluate the growth of new semiconductor structures by sequentially layering atomic monolayers. This could become a totally new type of chemistry. Technologically important materials such as InGaAs2 and GaA13As4 would not have alloy- related problems like carrier scattering and energy level broadening. (2) Growth studies of ordered magnetic II-VI semiconductors. Large enhancements of the magnetic susceptibility are expected for Cd3MnTe4, which appear to be necessary for devices like magnetically-tunable lasers and Faraday rotators. (3) Evaluate the laser-ablation technique for p- and n-doping of II-VI semiconductors. p-n junctions are just beginning to become feasible for CdTe and possible ZnSe. (4) Overlaying thin films of magnetic metals may lead to higher density magnetic recording. (5) Epitaxial growth and thin film layering of high-Tc superconductors. In situ deposition of insulating barriers could lead to improve tunnel junctions.