Research Initiation Award: Cooper For Microelectronics Applications By Low-Temperature MOCVD (LTMOCVD) Processes
Research Initiation Award: Cooper For Microelectronics Applications By Low-Temperature MOCVD (LTMOCVD) Processes
批准号:
9010661
负责人:
Alain Kaloyeros
金额:
$7.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-07-01 至 1992-06-30
中文摘要
提出了一项用于新一代电子器件的铜膜生长、表征和测试的研究计划。该方法侧重于CVD过程,该过程使用在低至150摄氏度的温度下分解的蒸汽前体。该过程被称为“低温金属-有机CVD”,或LTMOCVD。
英文摘要
A research program for the growth, characterization and testing of copper films for applications in the new generations of electronic devices is proposed. The approach focuses on a CVD process which employs vapor precursors which dissociate at temperatures as low as 150'C. The process is "Low Temperature Metal-Organic CVD," or LTMOCVD.
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会议论文
Presidential Young Investigator Award
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批准号:9157011
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项目类别:Continuing Grant
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资助金额:$31.25万
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财政年份:1991
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负责人:Alain Kaloyeros
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依托单位:
海外基金