Invesitgations of periodic quantum wave guide structures

本研究的目的是 设计、制造和表征 高共振电子波导 结构. 半导体 结构将使用 高迁移率GaAs/A1 GaAs 异质结构 器械设计 将与HEMT类似 除了栅极结构之外的器件将 证实了二维电子 源极和漏极之间的气体 到一维。 的区域 禁闭将形成一个 类似于添加调谐的方式 短柱和空腔到传统的 波导系统 我们将研究 透射系数和 将器械的外观作为 栅极偏置函数，源极-漏极 偏压、温度和施加的电压 磁场

The objective of this research is to design, fabricate and characterize highly resonant electron wave guide structures. The semiconductor structures will be fabricated using high mobility GaAs/A1GaAs heterostructures. Device design will be similar to that of HEMT devices except a gate structure will confirm the two-dimensional electron gas between the source and the drain to one-dimension. The region of confinement will be shaped in a manner analogous to adding tuning stubs and cavities to a conventional wave guide system. We will examine the transmission coefficients and transconductance of the device as a function of gate bias, source-drain bias, temperature and applied magnetic field.