I/UCRC for Nonlinear Modeling of Power GaAs MESFET
I/UCRC for Nonlinear Modeling of Power GaAs MESFET
批准号:
9022259
负责人:
Carl White
金额:
$10.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-08-01 至 1993-01-31
中文摘要
该研究机会奖资助了摩根州立大学的一个项目,“用于分布式放大器的功率GaAs MESFET非线性建模”,以支持加州大学圣地亚哥分校的高速集成电路和系统工业/大学合作研究中心。这个为期两年的项目将向该中心的行业咨询委员会报告。本课题研究的是微波功率分布式放大器的设计、制造和测试。该研究将涉及新模型和CAD程序的开发,以及实际放大器的设计和测试。这种方法新颖而独特,应该会在“最先进的技术”中取得重大进展。摩根州立大学拥有开展这项研究的设施和设备。项目经理建议摩根州立大学获得为期两年的10万美元的研究机会奖。
英文摘要
This Research Opportunity Award funds a project, "Nonlinear Modeling of Power GaAs MESFET for Distributed Amplifiers" at Morgan State University in support of the University of California at San Diego's Industry/University Cooperative Research Center for High Speed Integrated Circuits and Systems. This two-year project is reporting to the Center's Industry Advisory Board. The research is studying the design, fabrication and testing of a microwave Power Distributed Amplifier. The study will involve the development of new models and CAD programs, as well as the actual amplifier design and test. The approach is new and unique and should result in a significant advance in the "state of the art." Morgan State has the facilities and equipment to carry out the research. The Program Manager recommends that Morgan State University be awarded $100,000 for two (2) years for this Research Opportunity Award.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Thin Film Diamond Deposition
-
批准号:8911618
-
项目类别:Standard Grant
-
资助金额:$1.2万
-
财政年份:1989
-
负责人:Carl White
-
依托单位:
海外基金