Thin Film Diamond Deposition

本课题将开发一种等离子体化学气相沉积金刚石生长系统。它一般由微波源、Astex等离子体室、高真空系统和各种碳氢化合物气体组成。一旦生长系统被开发出来，薄膜金刚石将在各种衬底上沉积。这将涉及几个生长参数的优化，如；气体流速，真空系统压力位置相对于等离子体，时间，能量密度，碳氢化合物气体类型，气体比，以确保单晶金刚石生长。为了确定薄膜沉积的特性，将进行各种材料和相关测量。

In this proposal a plasma chemical vapor deposition diamond growth system will be developed. It will consist in general of a microwave source, Astex plasma chamber, high vacuum system, and various hydrocarbon gases. Once the growth system has been developed, the deposition of thin film diamond onto various substrates will be carried out. This will involve the optimization of several growth parameters such as; gas flow rate, vacuum system pressure position of the substrate with respect to the plasma, time, energy density, types of hydrocarbon gases, and gas ratio to insure single crystal diamond growth. To determine the characteristics of the thin film depositions a variety of materials and related measurements will be performed.