Diffusion Mechanisms in Gallium Arsenide

本项目旨在实现对砷化镓扩散机制的基本理解。具体目标是确定：1)控制每个子晶格上扩散的主要点缺陷，2)相应的电荷状态，以及3)在高掺杂浓度下扩散异常增强的原因。控制费米能级和砷超压将用于获得扩散系数，并确定与扩散相关的主导点缺陷。在n型砷化镓中，该结果有望将电子浓度饱和度、III族扩散率饱和度和VI族溶解度变化的一致观察结果联系起来。在p型砷化镓中，结果有望将控制II族和III族扩散的机制联系起来，特别是在高受体浓度下。新的定性和定量理解的基本过程重要的扩散机制在化合物半导体的预期从这个项目；研究结果也与微电子工业具有技术相关性。

This project seeks to achieve a fundamental understanding of diffusion mechanisms in gallium arsenide. Specific goals are to determine: 1)the dominant point defects controlling diffusion on each sublattice, 2)the corresponding charge states, and 3)the causes of anomalous enhancements in diffusion at high dopant concentrations. Controlled Fermi level and arsenic overpressure will be used to obtain diffusion coefficients, and to identify the dominant point defects associated with diffusion. In n-type Gallium Arsenide, the results are expected to link the coincident observations of electron concentration saturation, group III diffusivity saturation, and changes in the group VI solubility. In p-type Gallium Arsenide, the results are expected to link the mechanisms controlling group II and III diffusion, particularly at high acceptor concentrations. New qualitative and quantitative understanding of fundamental processes important to diffusion mechanisms in compound semiconductors is anticipated from this project; the results also have technological relevance to the microelectronics industry.