Diffusion Mechanisms in Gallium Arsenide

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This project seeks to achieve a fundamental understanding of diffusion mechanisms in gallium arsenide. Specific goals are to determine: 1)the dominant point defects controlling diffusion on each sublattice, 2)the corresponding charge states, and 3)the causes of anomalous enhancements in diffusion at high dopant concentrations. Controlled Fermi level and arsenic overpressure will be used to obtain diffusion coefficients, and to identify the dominant point defects associated with diffusion. In n-type Gallium Arsenide, the results are expected to link the coincident observations of electron concentration saturation, group III diffusivity saturation, and changes in the group VI solubility. In p-type Gallium Arsenide, the results are expected to link the mechanisms controlling group II and III diffusion, particularly at high acceptor concentrations. New qualitative and quantitative understanding of fundamental processes important to diffusion mechanisms in compound semiconductors is anticipated from this project; the results also have technological relevance to the microelectronics industry.