Defect Formation During Organometallic Vapor Phase Epitaxy of III-V Semiconductors

III-V 族半导体有机金属气相外延过程中缺陷的形成

• 批准号: 9508572
• 负责人: Richard Cohen
• 金额: $ 26.54万
• 依托单位: University of Utah
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-15 至 1999-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9508572&HistoricalAwards=false
• 关键词: Defect; Formation; During; Organometallic; Vapor

9508572 Cohen This research aims at a definitive assessment of doping and diffusion effects in organometallic vapor phase epitaxy (OMVPE) with the study of GaAs, InP, and InGaAs. The research emphasis is on atomicl level details of nucleation, epitaxy, and crystal dislocation formation. Studies will be conducted to better understand and hence to control: (1) suppression of diffusion in order to minimize junction motion, precipitation in heavily doped regions, misfit dislocation formation, and (2) enhancement of diffusion to produce second phase formation including adjacent phases with potential application for lateral devices with different bandgaps. Changes in diffusivity and dopant solubility will be related to Fermi level pinning and the orientation of the wafer surface. The results will be characterized in terms of mesoscopic defect structures such as bunching of atomic steps, nucleation or suppression of misfit dislocations, and second condensed phase formation. %%% This project will be important to gaining increased fundamental understanding of doping and diffusion related effects of compound semiconductor materials which occur during their synthesis and processing. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. The knowledge and understanding of materials, and materials processing resulting from this program is expected to contribute significantly to advanced devices used for information processing, computing, and telecommunications. ***

9508572 Cohen本研究旨在通过对GaAs、InP和InGaAs的研究，明确评估有机金属气相外延（OMVPE）中的掺杂和扩散效应。 研究的重点是原子水平的细节的成核，外延，晶体位错的形成。 将进行研究以更好地理解并因此控制：（1）抑制扩散以最小化结运动、重掺杂区中的沉淀、失配位错形成，以及（2）增强扩散以产生第二相形成，包括具有不同带隙的横向器件的潜在应用的相邻相。 扩散率和掺杂剂溶解度的变化将与费米能级钉扎和晶片表面的取向有关。 结果将其特征在于在介观缺陷结构，如原子台阶，成核或抑制失配位错，和第二凝聚相的形成。该项目将是重要的，以获得更多的基本了解掺杂和扩散有关的影响化合物半导体材料，发生在其合成和加工。该计划的一个重要特点是在一个基本的和技术上重要的领域培养研究生和本科生。该计划所产生的材料和材料处理的知识和理解预计将为用于信息处理，计算和电信的先进设备做出重大贡献。 ***