Presidential Young Investigator Award

总统青年研究员奖

• 批准号: 9058557
• 负责人: Dawn Bonnell
• 金额: --
• 依托单位: University of Pennsylvania
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-01 至 1996-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9058557&HistoricalAwards=false
• 关键词: Presidential; Young; Investigator; Award

The goal of this Presidential Young Investigator grant is to determine local electronic structure of defects in ceramics. The research uses scanning tunnelling microscopy with simultaneous photoexcitation to increase the free carrier concentration. Preliminary results have identified the potential to use this technique to identify structural and chemical defects in these wide band gap materials. The observed increase and distinct variation in the conductance is a detector of photoexcitation processes, allowing optical spectroscopy to be performed with the spatial resolution of scanning tunnelling microscopy. The research is being done on silicon carbide and zinc oxide. The effects of valence-to-conduction band excitation and defect-to- conduction band excitation are being isolated. Reflection, transmission electron microscopy and spectrophotometry are being used as collaborative techniques.

这项总统青年研究员补助金的目标是确定陶瓷缺陷的局部电子结构。这项研究使用扫描隧道显微镜和同时光激发来增加自由载流子浓度。初步结果已经确定了使用这种技术来识别这些宽带隙材料中的结构和化学缺陷的可能性。观察到的电导的增加和明显的变化是光激发过程的探测器，允许以扫描隧道显微镜的空间分辨率执行光学光谱。目前正在对碳化硅和氧化锌进行研究。价-导带激发和缺陷-导带激发的影响是隔离的。反射法、透射式电子显微镜和分光光度法被用作协作技术。