Scanning Tunneling Microscopy of Ceramics: I Atomic and Electronic Structure of ZnO

扫描隧道显微镜是一种创新的新方法， 表面原子和电子结构亚原子空间分析 分辨率 STM结构成像和电流成像光谱 将被用来研究掺杂剂对电子的影响， ZnO压敏电阻材料的结构 中的电子结构 晶界附近的耗尽激光器将与 谷物的中心。 晶界的结构将是 探测以确定晶界捕获状态是否是由于 偏析杂质或晶格应变缺陷。 这些结果将 与现有的变阻器行为模型相比。 这样做的影响 将在两个领域开展工作。 作为扫描的第一个演示， 隧道显微镜在陶瓷，它将说明一个扩大 潜力的技术，并在此基础上进一步工作 区 ZnO电子结构的表征将是有用的 在完善压敏电阻行为模型和指导未来的组成 修改.

Scanning tunneling microscopy is an innovative new method of surface atomic and electronic structural analysis with subatomic spatial resolution. Structural imaging and current image spectroscopy with STM will be used to investigate the effects of dopants on the electronic structure of ZnO varistor materials. The electronic structure in the depletion lasers near the grain boundaries will be compared with that in the center of the grains. The structure of the grain boundary will be probed to determine if grain boundary trapping states are due to segregated impurities or lattice strain defects. These results will be compared to existing models of varistor behavior. The impact of this work will be seen in two fields. As the first demonstration of scanning tunneling microscopy in ceramics it will illustrate an expanded potential of the techniques and be the basis of further work in this area. The characterization of ZnO electronic structure will be useful in refining models of varistor behavior and guiding future composition modifications.