Scanning Tunneling Microscopy of Ceramics: I Atomic and Electronic Structure of ZnO

陶瓷的扫描隧道显微镜：I ZnO 的原子和电子结构

• 批准号: 8707629
• 负责人: Dawn Bonnell
• 金额: --
• 依托单位: University of Pennsylvania
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-09-01 至 1989-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8707629&HistoricalAwards=false
• 关键词: Scanning; Tunneling; Microscopy; Ceramics; Atomic

Scanning tunneling microscopy is an innovative new method of surface atomic and electronic structural analysis with subatomic spatial resolution. Structural imaging and current image spectroscopy with STM will be used to investigate the effects of dopants on the electronic structure of ZnO varistor materials. The electronic structure in the depletion lasers near the grain boundaries will be compared with that in the center of the grains. The structure of the grain boundary will be probed to determine if grain boundary trapping states are due to segregated impurities or lattice strain defects. These results will be compared to existing models of varistor behavior. The impact of this work will be seen in two fields. As the first demonstration of scanning tunneling microscopy in ceramics it will illustrate an expanded potential of the techniques and be the basis of further work in this area. The characterization of ZnO electronic structure will be useful in refining models of varistor behavior and guiding future composition modifications.

扫描隧道显微镜是一种具有亚原子空间分辨率的表面原子结构和电子结构分析的创新方法。结构成像和扫描隧道显微镜电流成像光谱将用于研究掺杂对氧化锌压敏材料电子结构的影响。对晶界附近的耗尽激光器的电子结构与晶体中心的电子结构进行了比较。将探索晶界的结构，以确定晶界陷阱态是由于偏析杂质还是晶格应变缺陷造成的。这些结果将与现有的压敏电阻行为模型进行比较。这项工作的影响将体现在两个领域。作为陶瓷中扫描隧道显微镜的首次演示，它将展示这项技术的扩展潜力，并为这一领域的进一步工作奠定基础。对氧化锌电子结构的表征将有助于完善压敏电阻行为的模型，并指导未来的成分修改。