UV Spectroscopy of Metal-Organic Molecular Beam Epitaxy (MOMBE)
UV Spectroscopy of Metal-Organic Molecular Beam Epitaxy (MOMBE)
批准号:
9112279
负责人:
Thomas Pearsall
金额:
$4.99万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-08-15 至 1993-01-31
中文摘要
这笔赠款用于购买紫外线光谱系统,用于原位和实时研究化学束外延生长的化学和热力学。紫外光谱是一种强大的科学工具,最适合于化学束外延生长过程的研究。这项提议中描述的设备将创造紫外线吸收光谱和激光诱导荧光光谱的能力。这两种技术将用于研究III-V半导体和合金微结构的外延生长。与使用单元源的分子束外延不同,化学束外延使用的是气体源(金属有机物和氢化物)。因此,外延生长的化学动力学比分子束外延更复杂,但更容易测量。有了这项建议中所要求的设备,就有可能通过探测底物上方的区域来获得定量的化学信息。该设备可以提供有关分子和原子物种的浓度和电子态的信息。本提案中所述的紫外光谱分析所需的设备类型不是任何供应商提供的单个设备,为了进行此类研究,有必要组装适当的单个部件。
英文摘要
This grant if for the purchase of an ultra-violet spectroscopy system for research on the chemistry and thermodynamics of epitaxial growth by chemical beam epitaxy in-situ and in real time. UV spectroscopy is a powerful scientific tool that is best suited for the study of growth processes by chemical beam epitaxy. The equipment described in this proposal will create the capability for UV absorption spectroscopy and laser-induced fluorescence spectroscopy. These two techniques will be used for the investigation of epitaxial growth of III-V semiconductor and alloy microstructures. In contrast to molecular beam epitaxy in which elemental sources are used, gas sources (metal- organics and hydrides) are used in chemical beam epitaxy. Consequently the chemical dynamics of epitaxial growth are more complex, but easier to measure than is the case in MBE. With the equipment requested in this proposal, it will be possible to obtain quantitative chemical information by probing the region just above the substrate. This equipment can provide information about the concentrations and electronic states of molecular and atomic species. The type of equipment needed for the UV spectroscopy described in this proposal is not available as a single unit from any supplier, and in order to perform such studies, it is necessary to assemble appropriate individual components.
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会议论文
Student Travel Support for the International Symposium on Si-Heterostructures, Barga, Italy, September 9-12, 1997
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批准号:9707180
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项目类别:Standard Grant
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资助金额:$0.6万
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财政年份:1997
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负责人:Thomas Pearsall
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依托单位:
Epitaxial Growth of Gallium Arsenide Nitride Heterostructures from the Vapor Phase
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批准号:9632166
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项目类别:Continuing Grant
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资助金额:$57.01万
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财政年份:1996
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负责人:Thomas Pearsall
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依托单位:
Non-Invasive Process Monitoring and Real-Time Control for Semiconducting Manufacturing
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批准号:9531816
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项目类别:Continuing Grant
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资助金额:$44.0万
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财政年份:1996
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负责人:Thomas Pearsall
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依托单位:
Differential Optical Absorption Spectroscopy in Ge-Si Direct and Indirect Bandgap Superlattices
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批准号:9210535
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项目类别:Continuing Grant
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资助金额:$30.03万
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财政年份:1992
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负责人:Thomas Pearsall
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依托单位:
Sfc Travel Award (In Indian Currency) to Lecture & Conduct Rsch in the Physics of Semiconductor Devices For Optical Communication & Solar Cell Applications, Etc.
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批准号:8214399
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项目类别:Standard Grant
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资助金额:$0.22万
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财政年份:1982
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负责人:Thomas Pearsall
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依托单位:
海外基金