Epitaxial Growth of Gallium Arsenide Nitride Heterostructures from the Vapor Phase

9632166 Pearsall本项目是一个多学科的研究项目，主要研究具有强非混相性的化合物半导体混合晶体体系GaAsN外延沉积的基础材料合成和工艺研究。将追求一种基于远离平衡的条件的新方法，涉及pi在早期研究中证明的原子层生长技术；详细的结构、光学和电气特性将是该项目不可或缺的一部分。该提案解决了两个有争议的话题，即GaAsN合金的实现，以及这种低缺陷密度III-V合金薄膜在硅衬底上的异质外延生长，并努力以分阶段的方式对这两个领域的进展进行更深入的理解和实验展示。该项目将基础材料化学/固态物理和材料加工研究与先进的表征工具和分析方法相结合，以解决具有高科学价值和潜在技术效益的主题领域的前沿问题。该研究将在基础水平上为先进化合物半导体材料和结构的几个方面提供基础材料科学知识，适用于器件评估。从本研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料加工路线提供基本的理解和基础，为提高先进微电子和光子器件的性能做出贡献。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

9632166 Pearsall This multidisciplinary research project addresses basic materials synthesis and processing research on the epitaxial deposition of a compound semiconductor mixed crystal system, GaAsN, having intrinsic strong immiscibility. A novel approach based on conditions far from equilibrium involving atomic layer growth techniques demonstrated by the PIs in earlier research will be pursued; detailed structural, optical and electrical characterization will be an integral part of the project. The proposal addresses two controversial topics, the realization of GaAsN alloys, and the heteroepitaxial growth of such low defect density III-V alloy films on silicon substrates, and strives for greater understanding and experimental demonstration of progress in both areas in a phased approach. %%% The project combines fundamental materials chemistry/solid state physics and materials processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of high scientific value and potential technological benefits. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced compound semiconductor materials and structures appropriate for device assessments. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced microelectronic and photonic devices by providing a fundamental understanding and a basis for designing and producing improved materials, and materials processing routes. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***