Epitaxial Growth of Gallium Arsenide Nitride Heterostructures from the Vapor Phase

气相外延生长砷化镓氮化物异质结构

• 批准号: 9632166
• 负责人: Thomas Pearsall
• 金额: $ 57.01万
• 依托单位: University of Washington
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-08-15 至 2000-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9632166&HistoricalAwards=false
• 关键词: Epitaxial; Growth; Gallium; Arsenide; Nitride

9632166 Pearsall This multidisciplinary research project addresses basic materials synthesis and processing research on the epitaxial deposition of a compound semiconductor mixed crystal system, GaAsN, having intrinsic strong immiscibility. A novel approach based on conditions far from equilibrium involving atomic layer growth techniques demonstrated by the PIs in earlier research will be pursued; detailed structural, optical and electrical characterization will be an integral part of the project. The proposal addresses two controversial topics, the realization of GaAsN alloys, and the heteroepitaxial growth of such low defect density III-V alloy films on silicon substrates, and strives for greater understanding and experimental demonstration of progress in both areas in a phased approach. %%% The project combines fundamental materials chemistry/solid state physics and materials processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of high scientific value and potential technological benefits. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced compound semiconductor materials and structures appropriate for device assessments. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced microelectronic and photonic devices by providing a fundamental understanding and a basis for designing and producing improved materials, and materials processing routes. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9632166 Pearsall该多学科研究项目涉及化合物半导体混合晶体系统GaAsN的外延沉积的基础材料合成和加工研究，具有内在的强不可吸收性。 一种新的方法的基础上远离平衡的条件下，涉及原子层生长技术证明了PI在早期的研究将被追求;详细的结构，光学和电学特性将是该项目的一个组成部分。该提案解决了两个有争议的话题，实现砷化镓合金，和异质外延生长的硅衬底上的这种低缺陷密度III-V合金薄膜，并争取更好地理解和实验演示在这两个领域的进展分阶段的方法。该项目将基础材料化学/固态物理和材料加工研究与先进的表征工具和分析方法相结合，以解决具有高科学价值和潜在技术效益的热门领域的前沿问题。 该研究将在基础层面上为适用于器件评估的先进化合物半导体材料和结构的几个方面提供基础材料科学知识。 从这个研究项目中获得的知识和理解，预计将有助于在一般的方式来提高先进的微电子和光子器件的性能，通过提供一个基本的理解和基础，设计和生产改进的材料，材料加工路线。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***