In-Situ Synthesis of Ferroelectric and Superconductor Thin Films on Semiconductors

这项拟议的研究旨在制造定制的微结构 半导体上的铁电超导薄膜 具有和不具有缓冲层的衬底，以及显影 深入了解结构与性能的相关性， 铁电和超导薄膜。 为实现这些目标将 控制和系统的变化，在微观结构的 半导体和外延缓冲层上的铁电薄膜 半导体上的层。 为了便于定制 在微结构中，将沉积缓冲层， 扩散阻挡层，并提供良好的热匹配之间的 膜和基板。 这种方法也将用于存款 无裂纹超导薄膜及相关超晶格 半导体衬底上的结构。 %%%% 这项研究将提供定制的铁电加工 膜以获得所需的电性能。 铁电 半导体上的薄膜是重要的电子器件， 作为非易失性存储器。 这项研究也将导致 无裂纹外延超导薄膜的制备， 半导体衬底上的相关结构。 本研究旨在 深入了解结构-性能 这些电影中的关系。

This proposed research aims at fabricating tailored microstructure ferroelectric and superconducting thin films on semiconductors substrates with and without buffer layers, and developing a thorough understanding of the structure-property correlations in ferroelectric and superconducting films. This will be achieved by controlled and systematic variation in the microstructure of the ferroelectric films on semiconductors and on epitaxial buffer layers on semiconductors. To facilitate the tailoring of the microstructure, buffer layers will be deposited which act as diffusion barriers and provide good thermal matching between the film and the substrate. This approach will be also used to deposit crack-free superconducting thin films and related superlattice structures on semiconductor substrates. %%%% This research will provide tailored processing of ferroelectric films to obtain the desired electrical properties. Ferroelectric thin films on semiconductors are important electronic devices such as non-volatile memories. This research will also lead to the fabrication of crack-free epitaxial superconducting films and related structures on semiconductor substrates. This study aims to develop a thorough understanding of the structure-property relationships in these films.