Correlation between the Surface Properties and the BreakdownPhenomena of Alumina Ceramics
氧化铝陶瓷表面性能与击穿现象的相关性
基本信息
- 批准号:9113500
- 负责人:
- 金额:$ 22.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1992
- 资助国家:美国
- 起止时间:1992-02-15 至 1995-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This project aims to identify the insulator surface properties, at the microscopic level, that control the electron multiplication process leading to surface breakdown under electric excitation. The surface properties of single crystal (defect free) and polycrystalline alumina (99.9% Al2O3) will be systematically altered by mechanical, thermal, and chemical treatments. Different treatments are intended to modify, in a deliberate and controlled manner, such surface physical and chemical properties as a microdamage, residual stress, surface dielectric constant, oxidation state, surface potential, and density of localized (defect) levels in the band gap. Phase I consists of three subsections: (a) Mechanical treatment, (b) Thermal treatment, and (c) Surface annealing. Phase II will consist of (d) Chemical treatment, and (e) Surface cleaning. %%%% This project is a comprehensive study of high voltage flashover phenomena, which have high merits in scientific contents. The planned materials variables are based on preliminary work, and can be expected to yield significant results. The results can be useful to the electrical equipment and electronic industries. They should extend the understanding of surface discharge processes, not only for vacuum gaps but also for general gas insulation problems.
本项目旨在确定绝缘子表面特性, 在微观层面上,控制着电子倍增 在电激励下导致表面击穿的过程。 单晶(无缺陷)的表面性质和 多晶氧化铝(99.9%Al2O3)将被系统地 改变 通过机械、热和化学处理。 不同 治疗的目的是改变,在一个故意和控制 的方式,如表面的物理和化学性质, 微损伤,残余应力,表面介电常数, 氧化态、表面电位和局域化的密度 带隙中的(缺陷)能级。 第一阶段包括三个 小节:(a)机械处理,(B)热处理,以及 (c)表面退火。 第二阶段将包括(d)化学 处理,和(e)表面清洁。 %%%% 本项目是对高压闪络的综合研究 现象,具有很高的科学含量。 的 计划材料变量基于前期工作, 预计将产生重大成果。 研究结果可 可用于电气设备和电子工业。 他们 应该扩展对表面放电过程的理解,而不是 不仅用于真空间隙,而且用于一般的气体绝缘问题。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Tangali Sudarshan其他文献
SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4)
- DOI:
10.1007/s11664-015-4234-2 - 发表时间:
2015-11-25 - 期刊:
- 影响因子:2.500
- 作者:
Tawhid Rana;M.V.S. Chandrashekhar;Kevin Daniels;Tangali Sudarshan - 通讯作者:
Tangali Sudarshan
Tangali Sudarshan的其他文献
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{{ truncateString('Tangali Sudarshan', 18)}}的其他基金
ENGINEERING RESEARCH EQUIPMENT: Wideband Tunable Laser- Optical Spectrometer System.
工程研究设备:宽带可调谐激光光谱仪系统。
- 批准号:
9310440 - 财政年份:1993
- 资助金额:
$ 22.5万 - 项目类别:
Standard Grant
Pulse Power Engineering, Collaborative Research at the Indian Institute of Science, Bangalore, India, Travel Award in Indian Currency
脉冲功率工程,印度科学研究所合作研究,班加罗尔,印度,印度货币旅行奖
- 批准号:
8909905 - 财政年份:1989
- 资助金额:
$ 22.5万 - 项目类别:
Standard Grant
SFC Travel Award (in Indian Currency) to Establish Collaborative Research in High Voltage Engineering
SFC 旅游奖(以印度货币)建立高压工程合作研究
- 批准号:
8315445 - 财政年份:1983
- 资助金额:
$ 22.5万 - 项目类别:
Standard Grant
Liquid Metal Wetting of Metal and Insulator Surfaces For High Power Applications
高功率应用中金属和绝缘体表面的液态金属润湿
- 批准号:
8024712 - 财政年份:1981
- 资助金额:
$ 22.5万 - 项目类别:
Standard Grant
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