ENGINEERING RESEARCH EQUIPMENT: Wideband Tunable Laser- Optical Spectrometer System.
工程研究设备:宽带可调谐激光光谱仪系统。
基本信息
- 批准号:9310440
- 负责人:
- 金额:$ 5.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:1993
- 资助国家:美国
- 起止时间:1993-09-01 至 1995-02-28
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
WPC 2 $ B P Z $ Courier 10cpi #| x Õm x 6 X @ 8 ; X @ HP LaserJet Series II HPLASEII.PRS x @ , t 0 OpX @Courier 10cpi Line Printer 16.67cpi 2 X V F ` ? x x x , Õm x 6 X @ 8 ; X @ k + H H H , H H @ ; @ / 7 ) ...) (... % + 5 / ) $ + % ) 6 ) ' : ( : ! ' 9310440 Sudarshan The Department of Electrical and Computer Engineering at the University of South Carolina will purchase the wideband tunable laser optical spectrometer system requested in this proposal which will be used in the continuing support of a large number of projects in the high field materials laboratory. The main interests of this laboratory include high voltage electrical insulation, high field properties of photoconductive materials, and switching of high currents at high voltages for applications in pulsed power and power distribution environments. The specific projects in which the requested equipment will be used include investigations into photoconductive properties of the next generation electronic materials such as epitaxial polycrystalline Diamond and single crystal silicon carbide films, the high power switching properties of Si and GaAs at high voltages, and surface defect characterization of large bandgap ? p materials such as A1 2 O 3 , SiO 2 , and poly diamond films, which are excellent electrical insulating materials. ***
WPC 2美元 B P Z $ 10 cpi #|X m x 6 X @ 8 ; X @ HP LaserJet Series II HPLASEII.PRS X @ , t 0 OpX@C10cpi行式打印机16.67cpi 2 X V F ` ? x x x, m x 6 X @ 8 ; X @ k + H H H, H H @ ; @ / 7 ) ...) (... % + 5 / ) $ + % ) 6 ) ' : ( : ! ' 9310440 Sudarshan电气和计算机工程系在南卡罗来纳州的大学将购买宽带可调谐激光光谱仪系统要求在这一建议,将用于在高场材料实验室的大量项目的持续支持。 该实验室的主要兴趣包括高压电绝缘,光电导材料的高场特性,以及在脉冲功率和配电环境中应用的高电压下的高电流开关。 将使用所要求的设备的具体项目包括研究下一代电子材料的光电导特性,例如外延多晶金刚石和单晶碳化硅薄膜,Si和GaAs在高压下的高功率开关特性,以及大带隙的表面缺陷特性。 ? p 材料如A1 2 O 3 ,SiO 2 和多晶金刚石膜,它们是优良的电绝缘材料。***
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Tangali Sudarshan其他文献
SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4)
- DOI:
10.1007/s11664-015-4234-2 - 发表时间:
2015-11-25 - 期刊:
- 影响因子:2.500
- 作者:
Tawhid Rana;M.V.S. Chandrashekhar;Kevin Daniels;Tangali Sudarshan - 通讯作者:
Tangali Sudarshan
Tangali Sudarshan的其他文献
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{{ truncateString('Tangali Sudarshan', 18)}}的其他基金
Correlation between the Surface Properties and the BreakdownPhenomena of Alumina Ceramics
氧化铝陶瓷表面性能与击穿现象的相关性
- 批准号:
9113500 - 财政年份:1992
- 资助金额:
$ 5.5万 - 项目类别:
Continuing Grant
Pulse Power Engineering, Collaborative Research at the Indian Institute of Science, Bangalore, India, Travel Award in Indian Currency
脉冲功率工程,印度科学研究所合作研究,班加罗尔,印度,印度货币旅行奖
- 批准号:
8909905 - 财政年份:1989
- 资助金额:
$ 5.5万 - 项目类别:
Standard Grant
SFC Travel Award (in Indian Currency) to Establish Collaborative Research in High Voltage Engineering
SFC 旅游奖(以印度货币)建立高压工程合作研究
- 批准号:
8315445 - 财政年份:1983
- 资助金额:
$ 5.5万 - 项目类别:
Standard Grant
Liquid Metal Wetting of Metal and Insulator Surfaces For High Power Applications
高功率应用中金属和绝缘体表面的液态金属润湿
- 批准号:
8024712 - 财政年份:1981
- 资助金额:
$ 5.5万 - 项目类别:
Standard Grant
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