Electronic Transport in Graded Gallium Arsenide/Aluminum Gallium Arsenide Heterostructures

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Thick layers of high mobility electron gas are produced by remotely-doped GaAs/AlGaAs semiconductor heterostructures in which the aluminum (Al) concentration is graded in a parabolic profile. The electron mobility in the resulting structures can be quite high, because donor ions are located outside the wall. More complex electron profiles can be made using potentials other than simple parabolas. Such work will be carried out in this project, in which both the charge and spin density profiles will be spatially modulated. This will be accomplished in thick layers of high-mobility electron gas by using superlattices superimposed on parabolic wells, and by using periodic electric and magnetic gate structures fabricated with electron-beam lithography. The resulting structures and materials have very interesting electron- magnetic properties, of current interest from the fundamental solid state physics perspective, and of future interest for use as advanced semiconductor device materials.