Investigation of Non-Equilibrium Epitaxial Growth of Electronic Materials

这个基础研究项目利用了独特的能力， 热原子束散射（ABS）-高灵敏度到低灵敏度 覆盖杂质和缺陷，真实的时间测量--获得 复杂曲面的详细结构信息 没有表面损伤或充电效应， 研究外延的动力学、动力学和结构特性。 本研究将ABS技术与其它先进的 表面科学诊断方法，以表征 生长模式，以及外延的结构和化学细节， 晶体生长，一层一层 %%% 这项研究有望提供更深入的基础知识。 在原子水平上理解外延晶体生长。 从应用的角度来看，了解 在这个水平上的晶体生长特别有助于先进的 半导体器件设计和制造。 结果将 对于大规模的技术来说， 高速集成电子电路

This basic research project utilizes the capabilities unique to thermal atomic beam scattering(ABS)--high sensitivity to low coverage impurities and defects, real time measurement--to obtain detailed structural information for complex surface ordered phases without surface damage or charging effects allowing the study of kinetic, dynamical and structural properties of epitaxy. The research combines the ABS technique with other advanced surface science diagnostic methods to characterize both the growth mode, and the structural and chemical details of epitaxial crystal growth, layer by layer. %%% This research is expected to provide deeper fundamental understanding of epitaxial crystal growth at the atomic level. From an application point of view, understanding the details of crystal growth at this level is particularly helpful to advanced semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.