Implementation of Atom Beam Scattering to Study the Growth of Ultra Thin Films

利用原子束散射研究超薄膜的生长

• 批准号: 8802512
• 负责人: Gianfranco Vidali
• 金额: $ 23.46万
• 依托单位: Syracuse University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-12-01 至 1992-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8802512&HistoricalAwards=false
• 关键词: Implementation; Atom; Beam; Scattering; Study

This is an innovative experimental program of research to study fundamental issues in the physics and chemistry of ultra-thin films (one or two atomic layers). This study will implement atom beam scattering as a new technique to investigate the structure and chemical bonding of the atomic layers to the substrate. Materials being studied include metal films on silicon and metals. Studies include geometry and chemical bonding in heteroepitaxy, strained epitaxial films, kinetics of film growth, and electronic characterization of films and interfaces. Low energy electron diffraction and helium ion beam scattering will be used to characterize the structure of the films and interfaces. The research is relevant to processing and properties of integrated electronic circuits. Issues such as doping, Schottky barriers, and metallization will benefit from the research.

这是一个创新的研究性实验项目 在超薄物理和化学的基本问题 薄膜（一个或两个原子层）。 本研究将实施 原子束散射作为一种新的技术来研究 结构和化学键的原子层， 衬底 正在研究的材料包括金属薄膜， 硅和金属。 研究包括几何和化学 异质外延中的键合、应变外延膜、动力学 薄膜生长和薄膜的电子特性， 接口。 低能电子衍射与氦离子束 散射将被用来表征的结构， 薄膜和界面。 本研究涉及的工艺和性能， 集成电子电路 掺杂、肖特基等问题 阻挡层和金属化将从研究中受益。