Metallic Interactions with Antimony Based Semiconductors

将开展基础研究，以更好地了解金属与锑半导体的相互作用。这项研究对于改善化合物半导体的欧姆接触和肖特基势垒的形态、功能性和稳定性具有特别重要的意义。这项研究是以材料-结构为基础的，包括对金属-半导体和半导体-半导体界面的电子性质的详细研究。这项研究有望对金属-半导体和半导体-半导体的生长、加工以及这些异质结构的基本电子性质提供更深入的基础理解。从应用的角度来看，了解这些工艺和特性对半导体器件的设计和制造是有益的。研究结果将对大规模、高速集成电子和光子器件及电路的技术具有普遍意义。

Fundamental research directed toward improved understanding of metallic interactions with antimony-based semiconductors will be conducted. The research is of particular interest for improving the morphology, functionality, and stability of ohmic contacts and Schottky barriers to compound semiconductors. The study is material-structure based and includes detailed research on the electronic properties across metal-semiconductor and semiconductor-semiconductor interfaces. %%% This research is expected to provide deeper fundamental understanding of metal-semiconductor and semiconductor-semiconductor growth, processing, and the fundamental electronic properties of such heterostructures. From an application point of view, understanding these processes and properties is beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.