Metallic Interactions with Antimony Based Semiconductors

与锑基半导体的金属相互作用

• 批准号: 9121048
• 负责人: Arthur Milnes
• 金额: $ 22.5万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-07-15 至 1995-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9121048&HistoricalAwards=false
• 关键词: Metallic; Interactions; Antimony; Based; Semiconductors

Fundamental research directed toward improved understanding of metallic interactions with antimony-based semiconductors will be conducted. The research is of particular interest for improving the morphology, functionality, and stability of ohmic contacts and Schottky barriers to compound semiconductors. The study is material-structure based and includes detailed research on the electronic properties across metal-semiconductor and semiconductor-semiconductor interfaces. %%% This research is expected to provide deeper fundamental understanding of metal-semiconductor and semiconductor-semiconductor growth, processing, and the fundamental electronic properties of such heterostructures. From an application point of view, understanding these processes and properties is beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.

基础研究旨在提高对 金属与锑基半导体的相互作用将是 进行。 这项研究对于改善 欧姆接触的形态、功能和稳定性 和化合物半导体的肖特基势垒。 这项研究是 材料结构为基础，包括详细的研究， 金属-半导体间的电子性质， 半导体接口 %%% 这项研究有望提供更深入的基础知识。 了解金属半导体和 半导体生长、加工和 这种异质结构的基本电子性质。 从 从应用的角度来看，理解这些过程， 这些特性有益于半导体器件设计， 捏造 从总体上看，结果将具有重要意义 大规模、高速集成电路技术 电子和光子器件和电路。