Excitation Transfer in Luminescence of Semiconductors

半导体发光中的激发转移

• 批准号: 9121302
• 负责人: Gertrude Neumark
• 金额: $ 15万
• 依托单位: Columbia University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-07-01 至 1996-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9121302&HistoricalAwards=false
• 关键词: Excitation; Transfer; Luminescence; Semiconductors

The direct transfer of excitation energy among localized states via tunneling (hopping) in semiconductors is to be investigated. This process has often been neglected in the past. A study of the extent and of the mechanisms governing this transfer related to donor-acceptor pairs (DAPs) are necessary for a full understanding of luminescence phenomena. The proper material parameters for the luminescence processes will be re-evaluated using samples which have negligible transfer or where the correction factors are known. The work will center on Zinc-Selenium, for which a large number of samples are available. The study will include a detailed examination of time decay, and of spectral and intensity evolution as a function of excitation intensity and wavelength, temperature, and impurity concentration.

研究了半导体中激发能在局域态间通过隧穿（跳变）的直接传递。这一过程在过去常常被忽视。研究与供体-受体对（DAPs）有关的这种转移的程度和机制对于充分理解发光现象是必要的。使用具有可忽略的转移或已知校正因子的样品，将重新评估发光过程的适当材料参数。工作将以锌-硒为中心，有大量的样品可供选择。该研究将包括时间衰减的详细检查，以及光谱和强度演变作为激发强度和波长，温度和杂质浓度的函数。