Study of Doping in ZnBe Chalcogenide Alloys via MBE Growth with use of Non-Equilibrium Concepts

利用非平衡概念通过 MBE 生长在 ZnBe 硫系合金中进行掺杂研究

• 批准号: 9805760
• 负责人: Gertrude Neumark
• 金额: $ 17.5万
• 依托单位: Columbia University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-07-01 至 2003-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9805760&HistoricalAwards=false
• 关键词: Study; Doping; ZnBe; Chalcogenide; Alloys

9805760 Neumark This project aims for greater understanding of bipolar doping in wide bandgap semiconductors. A primary aim of the project to investigate nonequilibrium effects on doping during MBE growth, and to use the insight gained to improve doping. ZnSe and related alloys (with mainly nitrogen doping) will be used as a test system. A further aim of the project is to apply the resultant understanding to improve doping in ZnBe, and possibly ZnCdBe chalcogenide alloys, since these alloys are candidates for potential improvements in device lifetimes of ZnSe-based blue-green diode lasers. Specific aspects of MBE growth planned for investigation are planar doping, changes in the metal/chalcogenide ratio, and/or changes in crystallographic orientation. A further objective is to study and possibly eliminate DX centers by use of the planar doping technique. Planar doping will be used with both the dopant and a different chalcogenide (such as Te for ZnMgSeS) to modify the local environment of such centers so as to eliminate them from some systems where they now exist--it has been reported that simultaneous Te/N planar doping gives not only almost an order of magnitude improvement in hole concentrations in ZnSe, but also changes the ionization energy to close to the ZnTe value. Elimination of DX centers would be a major technological and fundamental breakthrough. In addition to the study of growth, it is also planned to coordinate growth with determination of compensating species. Considering non-equilibrium aspects of doping, different compensating species may dominate under different conditions. Compensating species resulting from various growth approaches will be studied, primarily via luminescence, positron annihilation spectroscopy, and optically detected magnetic resonance. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices. Experimental tools are now available to allow atomic level observation of materials defects and their origins which when better understood will allow advances in both fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area.

9805760 Neumark该项目旨在更好地了解宽带隙半导体中的双极掺杂。该项目的主要目的是研究MBE生长过程中掺杂的非平衡效应，并利用所获得的见解来改善掺杂。ZnSe和相关合金（主要是氮掺杂）将用作测试系统。该项目的另一个目的是应用所得到的理解，以改善掺杂的ZnBe，并可能ZnCdBe硫族化物合金，因为这些合金是潜在的改善ZnSe基蓝绿色二极管激光器的器件寿命的候选人。计划调查的MBE生长的具体方面是平面掺杂，金属/硫属化物比的变化，和/或晶体取向的变化。另一个目的是研究和可能消除DX中心的平面掺杂技术的使用。 平面掺杂将与掺杂剂和不同的硫属化物一起使用（例如Te用于ZnMgSeS）以改变这些中心的局部环境，从而从它们现在存在的一些系统中消除它们--已经报道同时Te/N平面掺杂不仅使ZnSe中的空穴浓度几乎提高了一个数量级，而且使电离能接近ZnTe值。 取消DX中心将是一个重大的技术和根本性的突破。除了研究生长外，还计划协调生长与确定补偿物种。考虑到掺杂的非平衡方面，不同的补偿物质可以在不同的条件下占主导地位。补偿物种产生的各种增长的方法将进行研究，主要是通过发光，正电子湮没光谱，和光学检测的磁共振。 该项目解决了具有高技术相关性的材料科学专题领域的基础研究问题。该研究将在基础层面上为电子/光子器件的重要方面提供基础材料科学知识。 实验工具现在可以允许原子水平上观察材料缺陷及其起源，当更好地理解时，将允许基础科学和技术的进步。从研究中获得的基本知识和理解预计将有助于提高先进设备的性能和稳定性，为设计和生产改进的材料和材料组合提供基本的理解和基础。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。