Boron Nitrogen Isostere-Doped Organometallics for Molecular Electronics

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The challenge of connecting two or more metals by a single chain of carbon atoms attracts intense study, thereby mimicking electronic circuitry at the molecular level. BN-Isosteric compounds involve selectively replacing (doping) carbon atoms with the elements boron (B) and nitrogen (N). These unprecedented materials should emulate and likely exceed the properties of all-carbon systems. This project aims to design and synthesise the first molecular BN-isosteric carbon-wire materials including examples based on metal-carbon multiple bonding. Expected outcomes beyond their isolation include high-level interrogation of the structure-function behaviour of their electrical and optical properties relevant to the technologies that will emerge.