Development of an Undergraduate High Speed Microelectronics Testing Laboratory at Florida A&M University.
Development of an Undergraduate High Speed Microelectronics Testing Laboratory at Florida A&M University.
批准号:
9152378
负责人:
Simon Foo
金额:
$2.73万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-07-15 至 1993-06-30
中文摘要
本计画建立超高速积体电路 (VHSIC)本科电气测试实验室 FAMU/FSU工程学院的工程专业学生。 该实验室提供实用的测试方法, 通过一系列的实验,为高年级学生提供VHSIC 其中涵盖了函数和参数的基本原理 试验.实验室是本科生的补充 微电子学课程,包括固态课程 器件,数字和模拟IC设计,以及计算机辅助- 超大规模集成电路(VLSI)的设计(CAD)。 有了新设备,学生们学习开关 属于高速微电子器件的特性 到诸如发射极耦合逻辑(ECL)、高- 加速互补金属氧化物半导体(HCMOS),以及 砷化镓金属-半导体场效应 晶体管(MESFET)。电气工程专业完成 实验室实验序列获得了全面的 高速集成电路知识
英文摘要
This project establishs a very-high-speed integrated circuit (VHSIC) testing laboratory for undergraduate electrical engineering students at the FAMU/FSU College of Engineering. This laboratory provides practical testing methodologies of VHSIC for senior-level students through a series of experiments which cover the fundamentals of functional and parametric testing. The laboratory supplements the undergraduate Microelectronics Program which includes courses in solid-state devices, digital and analog IC design, and the computer aided- design (CAD) of very large scale integration (VLSI) circuits. With the new equipment, the students study the switching characteristics of high-speed microelectronic devices belonging to logic families such as emitter-coupled logic (ECL), high- speed complementary-metal-oxide-semiconductor (HCMOS), and gallium arsenide (GaAs) metal-semiconductor field-effect transistors (MESFET). Electrical engineering majors completing the sequence of laboratory experiments gain a comprehensive knowledge of high-speed IC
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RIA: Dynamics of Oscillatory Neural Systems
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批准号:9309469
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项目类别:Standard Grant
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资助金额:$14.62万
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财政年份:1993
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负责人:Simon Foo
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依托单位:
海外基金