PYI: Electrodynamics in Optical Semiconductor Microcavities

PYI：光半导体微腔中的电动力学

• 批准号: 9157190
• 负责人: Dennis Deppe
• 金额: $ 31.25万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-01 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9157190&HistoricalAwards=false
• 关键词: PYI; Electrodynamics; Optical; Semiconductor; Microcavities

For optical emitters, the vertical-cavity surface- emitting laser has recently attracted much attention because of such considerations. The vertical-cavity structure may represent a geometry which allows for the ultimate miniaturization of the semiconductor laser. Analogous to the quantum size effects which influence charge carriers in semiconductors, the small optical cavity of the vertical-cavity laser (on the order of the optical wavelength) can be expected to influence the cavity confined photon emitted by the semiconductor. In this proposed research program, these cavity confined photon-semiconductor interactions will be experimentally investigated, with an emphasis on gleaning knowledge useful both for practical device design and also a more fundamental understanding of the semiconductor light emission process in micro-cavity structures. The cavity structures will be realized using molecular beam epitaxy to fabricate highly reflecting A1As/GaAs Bragg mirrors for Fabry-Perot cavities. High contrast dielectric mirrors deposited using electronbeam evaporation will also be studied. Characterization will focus on measuring the degree of cavity enhanced or inhibited spontaneous emission with various microcavity designs. Results of the studies will be used to fabricate improved microcavity (vertical- cavity) semiconductor lasers.

对于光发射体，垂直腔面发射激光器正是基于这样的考虑而引起了人们的广泛关注。垂直腔结构可以表示允许半导体激光器最终小型化的几何形状。类似于影响半导体中载流子的量子尺寸效应，垂直腔激光器的小光腔(在光学波长的数量级上)可以预期地影响半导体发出的腔限制光子。在这项拟议的研究计划中，将对这些腔受限光子-半导体相互作用进行实验研究，重点是收集对实际器件设计有用的知识，以及对微腔结构中的半导体发光过程有更基本的了解。利用分子束外延技术制作高反射率的法布里-珀罗腔用AlAs/GaAsBragg反射镜，实现腔结构。还将研究用电子束蒸发沉积的高对比度介质镜。表征将集中于测量不同微腔设计的腔增强或抑制自发辐射的程度。研究结果将用于制造改进的微腔(垂直腔)半导体激光器。