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GaAs-Based Quantum Dot Vertical-Cavity Surface-Emitting Lasers For 1.3 um Wavelength

GaAs-Based Quantum Dot Vertical-Cavity Surface-Emitting Lasers For 1.3 um Wavelength
1.3 um 波长的 GaAs 量子点垂直腔面发射激光器
批准号:
9734829
负责人:
Dennis Deppe
金额:
$24.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-09-01 至 2001-08-31

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英文摘要
Proposal Number: ECS-9734829 Principal Investigator: Dennis Deppe Title: GaAs-based quantum dot vertical-cavity surface-emitting lasers for 1.3 micron wavelength Abstract The proposed research is to develop quantum dot vertical-cavity surface-emitting lasers (VCSELs) and resonant cavity devices, which operate in the 1.3 micron wavelength region, based on strained layer InGaAs quantum dot (QD) structures grown on GaAs, and selective oxidation processes.
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