Presidential Young Investigator Award

该项目由总统青年研究员奖资助，涉及氧气从薄膜封装剂扩散到砷化镓的机制和动力学行为的基础研究。此外，还将考虑衬底掺杂物浓度的影响，以及表面氧化对埋藏杂质分布和缺陷结构的影响。在获得首席研究员的担保后，来自工业界的配套资金将用于使用扫描隧道显微镜测量肖特基势垒的空间分辨电流-电压的相关研究。这项关于微电子材料基本问题的工作对于提高我们对材料合成和加工的微观特征的一般理解是重要的，对电子工业具有至关重要的意义。

This project is funded by a Presidential Young Investigator award, and involves fundamental research studies of the mechanism and kinetic behavior of oxygen diffusion from thin film encapsulants into gallium arsenide. The effect of substrate dopant concentration and the behavior of buried impurity profiles and defect structures exposed to surface oxidation will also be considered. Matching funds from industry, when secured by the principal investigator, will be applied to a related study of spatially resolved current-voltent measurements of Schottky barriers using a scanning tunneling microscope. This work on fundamental microelectronic materials issues is important for improving our general understanding of microscopic features of synthesis and processing of materials and is of vital importance to the electronics industry.