Presidential Young Investigator Award

总统青年研究员奖

• 批准号: 9157724
• 负责人: Karen Kavanagh
• 金额: $ 29.35万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-07-01 至 1997-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9157724&HistoricalAwards=false
• 关键词: Presidential; Young; Investigator; Award

This project is funded by a Presidential Young Investigator award, and involves fundamental research studies of the mechanism and kinetic behavior of oxygen diffusion from thin film encapsulants into gallium arsenide. The effect of substrate dopant concentration and the behavior of buried impurity profiles and defect structures exposed to surface oxidation will also be considered. Matching funds from industry, when secured by the principal investigator, will be applied to a related study of spatially resolved current-voltent measurements of Schottky barriers using a scanning tunneling microscope. This work on fundamental microelectronic materials issues is important for improving our general understanding of microscopic features of synthesis and processing of materials and is of vital importance to the electronics industry.

该项目由总统青年研究者奖资助， 并涉及机制的基础研究， 薄膜澄清剂中氧扩散动力学行为 变成砷化镓 衬底掺杂剂的影响 浓度和掩埋杂质分布的行为， 暴露于表面氧化的缺陷结构也将 考虑了 由工业界提供的配套资金， 主要研究者，将应用于相关研究， 肖特基势垒的空间分辨电流-电压测量 使用扫描隧道显微镜的障碍。 这项工作对 基础微电子材料问题对于 提高我们对微观特征的一般理解 材料的合成和加工，并具有至关重要的 电子工业。