Control of Asymmetric Strain Relaxation in Lattice- Mismatched InGaAs/GaAs

本项目力求对外延应变InxGa(1-x)As中各向异性应变弛豫的起源有更深入的基本了解。该项目涉及基础研究问题，包括一般化合物半导体中不对称应变松弛的基本机制的识别，以及技术相关材料组合的方向。该方法涉及对样品误切和掺杂影响的系统研究，预计将提供一种精确的方法来比较不同机制的影响。将使用InP和GaAs衬底，以研究高in成分的各向异性，并研究基于磷化物的衬底对InGaAs弛豫过程的影响。该项目涉及具有高技术相关性的材料科学主题领域的基础研究问题。该研究将为电子/光子器件和集成电路的重要方面提供基础材料科学知识。此外，从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而为提高先进器件和电路的性能做出贡献。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

9710509 Kavanagh This project strives for greater basic understanding of the origins of anisotropic strain relaxation in epitaxially strained InxGa(1-x)As. The project addresses fundamental research issues and encompasses identification of basic mechanisms of asymmetric strain relaxation in compound semiconductors in general, along with an orientation toward technologically relevant material combinations. The approach involves a systematic study of the effects of sample miscut and doping which are expected to provide a precise method to compare the effects of different mechanisms. Both InP and GaAs substrates will be used allowing the study of anisotropies in high In compositions, and the investigation of the effects of a phosphide based substrate on InGaAs relaxation processes. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***