Control of Asymmetric Strain Relaxation in Lattice- Mismatched InGaAs/GaAs

9710509 Kavanagh该项目致力于对外延应变InxGa（1-x）As中各向异性应变弛豫的起源有更深入的基本了解。该项目涉及基础研究问题，并包括一般化合物半导体中不对称应变弛豫的基本机制的识别，沿着技术相关材料组合的方向。 该方法涉及到一个系统的研究，样品的误切和掺杂的影响，预计将提供一个精确的方法来比较不同的机制的影响。InP和GaAs衬底将被使用，允许在高In组合物的各向异性的研究，和磷化物为基础的衬底上InGaAs弛豫过程的影响的调查。该项目解决了具有高技术相关性的材料科学专题领域的基础研究问题。 该研究将在基础层面上为电子/光子器件和集成电路的重要方面提供基础材料科学知识。 此外，从研究中获得的基本知识和理解预计将通过提供基本理解和设计和生产改进材料和材料组合的基础，以一般方式提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9710509 Kavanagh This project strives for greater basic understanding of the origins of anisotropic strain relaxation in epitaxially strained InxGa(1-x)As. The project addresses fundamental research issues and encompasses identification of basic mechanisms of asymmetric strain relaxation in compound semiconductors in general, along with an orientation toward technologically relevant material combinations. The approach involves a systematic study of the effects of sample miscut and doping which are expected to provide a precise method to compare the effects of different mechanisms. Both InP and GaAs substrates will be used allowing the study of anisotropies in high In compositions, and the investigation of the effects of a phosphide based substrate on InGaAs relaxation processes. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***