Control of Asymmetric Strain Relaxation in Lattice- Mismatched InGaAs/GaAs

晶格失配 InGaAs/GaAs 中不对称应变弛豫的控制

• 批准号: 9710509
• 负责人: Karen Kavanagh
• 金额: $ 27.4万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-09-01 至 2000-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9710509&HistoricalAwards=false
• 关键词: Control; Asymmetric; Strain; Relaxation; Lattice

9710509 Kavanagh This project strives for greater basic understanding of the origins of anisotropic strain relaxation in epitaxially strained InxGa(1-x)As. The project addresses fundamental research issues and encompasses identification of basic mechanisms of asymmetric strain relaxation in compound semiconductors in general, along with an orientation toward technologically relevant material combinations. The approach involves a systematic study of the effects of sample miscut and doping which are expected to provide a precise method to compare the effects of different mechanisms. Both InP and GaAs substrates will be used allowing the study of anisotropies in high In compositions, and the investigation of the effects of a phosphide based substrate on InGaAs relaxation processes. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9710509 Kavanagh 该项目致力于对外延应变 InxGa(1-x)As 中各向异性应变弛豫的起源有更深入的了解。该项目解决了基础研究问题，包括识别化合物半导体中不对称应变弛豫的基本机制，以及技术相关材料组合的方向。 该方法涉及对样品误切和掺杂影响的系统研究，有望提供一种精确的方法来比较不同机制的影响。 InP 和 GaAs 衬底都将用于研究高 In 成分中的各向异性，并研究磷化物基衬底对 InGaAs 弛豫过程的影响。 %%% 该项目解决具有高度技术相关性的材料科学主题领域的基础研究问题。 该研究将从根本上为电子/光子器件和集成电路的重要方面贡献基础材料科学知识。 此外，从研究中获得的基础知识和理解预计将通过为设计和生产改进的材料和材料组合提供基本理解和基础，以一般方式有助于提高先进器件和电路的性能。 该计划的一个重要特点是通过在基础和技术重要领域对学生进行培训，将研究和教育结合起来。 ***