Computer Simulation of Reactors for Chemical Vapor Deposition

化学气相沉积反应器的计算机模拟

• 批准号: 9161060
• 负责人: Kailash Karki
• 金额: $ 5万
• 依托单位: Innovative Research Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-01-01 至 1992-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9161060&HistoricalAwards=false
• 关键词: Computer; Simulation; Reactors; Chemical; Vapor

Chemical vapor deposition (CVD) processes are used on a large scale for the preparation of electronically active and insulating layers for electronic and optical solid state devices. The flow, heat and mass transfer processes, and chemical reactions in a CVD reactor play a critical role in the quality of devices formed by CVD processes. The fluid dynamics in a CVD reactor is characterized by large temperature gradients, strong temperature dependence of the gas properties, combined forced and buoyancy-induced convection, and homogeneous gas phase and heterogeneous surface reactions. Accurate models of CVD processes can be used to design new systems and decrease the number of exploratory experiments needed, which may be very expensive. This Phase I, Small Business Innovation Research project consists of the initial portion of an overall program to develop and validate an accurate and efficient three- dimensional numerical model for some common CVD reactor configurations. The main features of the model will be: (1) solution of the governing equations on a body-conforming grid so that complex configurations can be accurately represented; (2) a higher-order representation of the convection and diffusion terms in the transport equations; (3) an efficient algorithm for the solution of the coupled discretization equations; (4) variable physical property formulation so that the important temperature dependence can be taken into account; (5) ability to solve conjugate problems so that conduction in reactor walls can be considered without requiring any arbitrary boundary conditions at fluid-solid interfaces; (6) a realistic representation of the reactor wall temperature distribution; and (7) completely flexible code structure so that any reaction scheme can be incorporated. The end product expected will be an acurate computational model for flow in practical CVD reactors.

化学气相沉积（CVD）工艺用于大面积的 制备电子活性和 电子和光学固态绝缘层 装置. 流动、传热和传质过程， 化学气相沉积反应器中的化学反应在 通过CVD工艺形成的器件的质量。 流体 CVD反应器中的动力学特征在于大的 温度梯度，温度依赖性强， 气体特性，强迫和浮力引起的组合 对流，均相气相和非均相 表面反应 CVD工艺的精确模型可以 用于设计新系统，减少 需要进行探索性实验，这可能非常昂贵。 第一阶段，小企业创新研究项目 由整个计划的初始部分组成， 制定并验证一个准确和有效的三- 几种常用CVD反应器的三维数值模型 配置. 该模型的主要特点将是：（1） 体协调网格上控制方程的解 以便准确地表示复杂的配置; (2)对流的高阶表示， 输运方程中的扩散项;（3）有效的 耦合离散化求解算法 方程;（4）可变物理性质公式， 可以考虑重要的温度依赖性， （5）解决共轭问题的能力， 反应器壁中的传导可以被考虑， 需要任意的流体-固体边界条件 界面;（6）反应器壁的真实表示 温度分布;（7）完全灵活编码 其结构使得可以结合任何反应方案。 最终产品预期将是一个精确的计算 实际CVD反应器中的流动模型。