Conventional and Coherent Quantum 1/f Effects in Solid State Electronic Devices and Microstructures

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1/f noise appears in most high-technology applications as a low-frequency fluctuation limiting the achievable performance and stability. On the other hand, physical cross sections and process rates have been shown theoretically by the author to fluctuate with a 1/f spectral density according to a universal formula which gives the power spectrum of fractional cross section fluctuations in terms of the fine structure constant a=1/137 if both the velocity change of the scattered current carriers and their number are known. We can now calculate quantum 1/f noise in all forms of scattering (impurity, phonon, umklapp, inter-valley), in bulk and surface recombination and tunneling rates, as well as emission processes. For extended currents in larger devices with over 1013 carriers per unit length the magnetic energy dominates the kinetic energy of drift motion, so the coherent quantum 1/f effect becomes dominant. The proposed research would apply this theory to solid state devices and microstructures, and would further develop the theory in the transition region between the conventional and coherent domains. We expect the proposed research to benefit high-tech applications through general and practical low 1/f noise design and optimization principles, and to improve the general understanding of the quantum 1/f effect as quantum chaos, or as a technically important fundamental law of nature.