Acquisition of a Custom Molecular Beam Epitaxy System

获得定制分子束外延系统

• 批准号: 9208130
• 负责人: Thomas Myers
• 金额: $ 11.05万
• 依托单位: West Virginia University Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-15 至 1995-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9208130&HistoricalAwards=false
• 关键词: Acquisition; Custom; Molecular; Beam; Epitaxy

The II-VI semiconductors feature bandgap energies corresponding to wavelengths which span the ultraviolet to the far infrared, thus giving the potential for a wide variety of optoelectronic devices. The development of a wide bandgap II-VI technology has been hampered by the difficulty in controlling the materials' properties. To achieve the full potential offered by II-VI materials, a complete understanding of their physical properties is required. This custom molecular beam epitaxy (MBE) system will allow the growth of II-VI semiconductors at West Virginia University. The system is designed to provide high quality materials for research into the optical, electrical, magnetic, and defect structure of these materials. The system is configured to allow a detailed study of growth kinetics using techniques based on reflection high energy electron diffraction, modulated beam mass spectroscopy, modulated optical spectroscopy (photoreflectance and electron beam electroreflectance), and reflectance difference spectroscopy. Emphasis will be placed on how external modifications, such as illumination with photons or high energy electrons, can be used to modify and control the growth kinetics. Investigations will be aimed at understanding and controlling the fundamental electro-optic properties of II-VI materials with emphasis on understanding point defects, and how defects control electro-optic properties.

II-VI族半导体的特征在于对应于以下的带隙能量： 从紫外线到远红外线的波长， 从而提供了用于各种光电器件的可能性。 宽带隙II-VI族技术的发展已经被 由于难以控制材料的 特性. 充分发挥第二至第六阶段的潜力 材料，对它们的物理特性的全面了解是 必需的. 这种定制的分子束外延（MBE）系统将 允许西弗吉尼亚州II-VI族半导体的增长 大学 该系统旨在提供高质量的 材料研究的光学，电学，磁学， 这些材料的缺陷结构。 述系统被配置为 允许使用基于以下技术的生长动力学的详细研究： 反射式高能电子衍射，调制束流质量 光谱学、调制光谱学（光反射和 电子束电反射率）和反射率差 谱 重点将放在如何外部 修改，例如用光子或高能量照明 电子可用于改变和控制生长动力学。 调查的目的是了解和控制 II-VI材料的基本电光特性， 强调了解点缺陷，以及如何控制缺陷 电光特性