Acquisition of a Custom Molecular Beam Epitaxy System

II-VI半导体的带隙能量与波长相对应，从紫外到远红外，从而为各种光电器件提供了潜力。由于难以控制材料的性质，宽禁带II-VI技术的发展一直受到阻碍。为了充分发挥II-VI材料的潜力，需要完全了解它们的物理性质。这种定制的分子束外延（MBE）系统将允许西弗吉尼亚大学II-VI半导体的生长。该系统旨在为研究这些材料的光学、电学、磁性和缺陷结构提供高质量的材料。该系统的配置允许使用基于反射高能电子衍射、调制束质谱、调制光谱学（光反射率和电子束电反射率）和反射差谱的技术来详细研究生长动力学。重点将放在如何外部修改，如光子或高能电子的照明，可以用来修改和控制生长动力学。研究将旨在了解和控制II-VI材料的基本电光性质，重点是了解点缺陷，以及缺陷如何控制电光性质。

The II-VI semiconductors feature bandgap energies corresponding to wavelengths which span the ultraviolet to the far infrared, thus giving the potential for a wide variety of optoelectronic devices. The development of a wide bandgap II-VI technology has been hampered by the difficulty in controlling the materials' properties. To achieve the full potential offered by II-VI materials, a complete understanding of their physical properties is required. This custom molecular beam epitaxy (MBE) system will allow the growth of II-VI semiconductors at West Virginia University. The system is designed to provide high quality materials for research into the optical, electrical, magnetic, and defect structure of these materials. The system is configured to allow a detailed study of growth kinetics using techniques based on reflection high energy electron diffraction, modulated beam mass spectroscopy, modulated optical spectroscopy (photoreflectance and electron beam electroreflectance), and reflectance difference spectroscopy. Emphasis will be placed on how external modifications, such as illumination with photons or high energy electrons, can be used to modify and control the growth kinetics. Investigations will be aimed at understanding and controlling the fundamental electro-optic properties of II-VI materials with emphasis on understanding point defects, and how defects control electro-optic properties.