Generation and Detection of Intense Terahertz Microwave Radiation Pulses from Semiconductor Photovoltaic Devices

半导体光伏器件强太赫兹微波辐射脉冲的产生和检测

• 批准号: 9211566
• 负责人: Xi-Cheng Zhang
• 金额: $ 12.5万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-15 至 1996-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9211566&HistoricalAwards=false
• 关键词: Generation; Detection; Intense; Terahertz; Microwave

This is a 1992 RIA Award. The objective of this proposal is to generate intense terahertz bandwidth microwave radiation pulses form semiconductor photovoltaic devices, and apply it to the study of transient electric and optoelectronic properties of dielectric materials under an extremely high field with a contactless approach. The technique consists of using a picosecond laser beam to illuminate semiconductor solar cells, and generates electron magnetic radiation produced by rapid current transients due to optical injection of free carriers into the static electric field. The radiation is directional and diffraction-limited. Since the microwave energy comes mainly from the static energy stored in the semiconductor devices rather than from the incident laser energy, with the proper design of device structure and high external bias, the total power of the radiation can well exceed the incident power of the laser beam. A study of the power scaling properties suggests that the scaling up to GigaWatt peak powers is feasible in semiconductor photovoltaic structure sizes up to 100 cm2. It is possible to study transient electric and optoelectric properties of dielectric materials under an extremely high field with a contactless approach, and to pursue a new subject: nonlinear microwave measurement of dielectric materials.

这是1992年的RIA奖。 的目标 这个提议是为了产生高强度的太赫兹 带宽微波辐射脉冲形式 半导体光伏器件，并应用于 它对暂态电的研究， 电介质材料的光电性能 在极高的磁场下， 非接触式方法。 该技术包括 利用皮秒激光束 半导体太阳能电池， 快速电磁辐射 由于光注入的电流瞬变 自由载流子进入静电场。 的 辐射是定向的并且衍射受限。 由于微波能量主要来自 从储存在 半导体器件，而不是从 适当设计的入射激光能量 器件结构和高的外部偏压， 辐射的总功率可以远远超过 激光束的入射功率。 一 功率缩放特性的研究表明， 将功率放大到千兆瓦峰值 在半导体光伏中是可行 结构尺寸高达100 cm2。 可以 研究瞬态电和光电 电介质材料的性能 极高的磁场，无触点 方法，并追求一个新的主题： 非线性微波介电测量 材料.