Transport and Thermodynamic Properties of Mesoscopic Systems

理论研究将进行运输和 低温下固体的热力学性质 新型微结构和半导体物理学 异质结构 这项研究将进一步扩大我们的 理解量子力学干涉效应及其 库仑相互作用和强磁场相互作用 介观和宏观导体。 议题将包括 介观系统的热力学性质， 相互作用和相互作用模型，介观涨落 弹道机制中的现象及其解释， 混沌系统的量子理论，以及介观和 二维电子系统的宏观性质 磁场 将使用以下分析方法进行计算： 杂质平均微扰理论、半经典方法和 随机矩阵理论，并采用递归绿色 功能技术，例如。 目标是获得一个 定量和微观描述的现象， 目前处于实验研究的最前沿， 这对未来的微电子技术有着重要的意义， 技术. %%% 将对设备中的电传输（电流）进行研究 它们是介于大的（宏观的）和原子之间的中间体， （微观）大小。 该介观区域使得 在宏观尺度上观察到微观效应， 不寻常的和有用的物理现象。 除了影响我们的 了解基础物理学，这些研究将具有重要意义 微电子学的分支。

Theoretical studies will be conducted on the transport and thermodynamic properties of solids at low temperature focusing on the physics of novel microstructures and semiconducting heterostructures. The research will extend further our understanding of quantum mechanical interference effects and their interplay with Coulomb interactions and high magnetic field in mesoscopic and macroscopic conductors. Topics will include thermodynamic properties of mesoscopic systems in both non- interacting and interacting models, mesoscopic fluctuation phenomena in the ballistic regime and their explanation in terms of the quantum theory of chaotic systems, and both the mesoscopic and macroscopic properties of two-dimensional electron systems in high magnetic field. Calculations will be done analytically using impurity-averaged perturbation theory, semi-classical methods and random matrix theory, and numerically using recursive Green function techniques, for instance. The objective is to obtain a quantitative and microscopic description of phenomena which are currently at the very forefront of experimental investigations and which have important implications for future microelectronic technology. %%% Research will be done on electrical transport (current) in devices which are of intermediate between large (macroscopic) and atomic (microscopic) size. This mesoscopic region is such that microscopic effects are seen on the macroscopic scale resulting in unusual and useful physical phenomena. Besides affecting our understanding of basic physics, these studies will have important ramifications for microelectronics.