Superconducting Thin Films for High Frequency Microwave Applications

MgO和蓝宝石上的高质量外延TlBaCaCuO薄膜 将准备衬底。 然而，对于这种情况存在一些问题。 外延生长，并提出克服这些困难， 通过使用惰性外延层缓冲衬底， 具有与TBCCO结构紧密的晶格匹配。 增长 外延Tl基薄膜通过建立后沉积 在薄的高质量CeO2缓冲层上进行退火处理 将进行。 如果成功，这一过程将取代许多 目前在LaAlO3上生长的微波元件材料 在频率可设置性是关键问题的高频下。

High quality, epitaxial TlBaCaCuO films on MgO and sapphire substrates will be prepared. However, some problems exist for such epitaxial growth and it is proposed to overcome these difficulties by buffering the substrate using an inert epitaxial layer, which has a close lattice match to the TBCCO structure. Growth of epitaxial Tl-based films via an established post deposition annealing process on top of thin, high quality CeO2 buffer layers will be undertaken. If successful, this process could replace much of the material currently grown on LaAlO3 for microwave components at high frequencies where frequency settability is a key issue.