Cubic Boron Nitride Films From a Novel Nonequilibrium Plasma Jet Technique

采用新型非平衡等离子体喷射技术制备立方氮化硼薄膜

• 批准号: 9261187
• 负责人: William Felder
• 金额: $ 5万
• 依托单位: AeroChem Research Laboratories, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-01-15 至 1993-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9261187&HistoricalAwards=false
• 关键词: Cubic; Boron; Nitride; Films; Novel

Cubic boron nitride (c-BN) films are attractive for coating wear parts because of their hardness and oxidation resistance Its wide band gap and high thermal conductivity make it a useful material for electronic applications. This work will demonstrate the feasibility of using a novel Nonequilibrium Plasma Jet (NEPJ), which is capable of depositing materials at high rates, for producing c-BN films; if successful this process should be scalable to commercial applications.

立方氮化硼(c-BN)薄膜因其硬度高、抗氧化性好、禁带宽度大、导热系数高等优点，在电子工业中具有广阔的应用前景。这项工作将证明使用一种新型的非平衡等离子射流(NEPJ)来生产c-BN薄膜的可行性；如果成功，该工艺应该可以扩展到商业应用。