Excellence in Research: Ultrasensitive Electromagnetic Field Detectors Based on Quantum Defects in 3C Silicon Carbide and Cubic Boron Nitride

近年来，量子科学因其在计算、通信和传感领域的巨大潜力而引起了人们的广泛关注。具有自旋相关电子跃迁的宽禁带半导体中的本征或有意缺陷已经证明了产生在室温下运行的量子通信、计算和传感系统的能力。在这个项目中，我们将研究利用3C碳化硅和立方氮化硼(这两种宽带隙材料)中的缺陷来制造超灵敏电磁场探测器的潜力。这些超灵敏探测器可用于多种用途，包括脑信号监测、无GPS导航和量子光探测和测距(LIDAR)。我们最初的重点将是电场探测器。有关3C-硅(碳化硅的立方修饰)和立方氮化硼性质的量子传感的文献很少或根本不存在。我们预计，这将为固态自旋的研究做出重大贡献，因为它证明了利用3C、SiC和CBN进行超灵敏电场和磁场探测的可行性。SIC拥有成熟的工业流程，有望实现拟议设备的快速大规模制造。立方氮化硼是一种新兴的超宽带隙材料，具有与金刚石相似的机械强度，可进行n型或p型掺杂。该项目还将对摩根州立大学(MSU)未被充分代表的少数族裔本科生和研究生、K12学生和公众进行量子信息科学概念和应用方面的培训产生重大影响。拟议的项目将极大地改善密歇根州立大学现有的研究和STEM培训基础设施，以补充建立一个量子材料研究中心和一个新的材料科学博士项目，重点是量子材料。该项目的成果将通过出版物、会议报告和研讨会广泛传播，以增进对利用缺陷进行超灵敏电场和磁场检测的科学和技术了解。为了实现拟议项目的目标，将模拟、设计和制造围绕量子缺陷的高质量(Q)因子(10^3)和小模体积的光子晶体(PHC)结构，以通过增强PHC腔共振耦合缺陷的零声子线(ZPL)发射来实现室温操作。3C-碳化硅材料生长在硅上，并从商业供应商购买，以及利用我们的内部生长能力在钻石上制造的CBN材料将用于该项目。生长后的宽禁带材料中的缺陷将用光致发光(PL)和光学检测磁共振(ODMR)进行表征。这些材料将被制成我们设计的探测器。制造的探测器将能够探测毫伏m^-1 Hz^-0.5范围内的电场和灵敏度为纳特斯拉Hz^-0.5的磁场。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Quantum science has attracted extensive attention in the recent years due to its potential in revolutionizing computing, telecommunication, and sensing. Native or intentional defects in wide bandgap semiconductors with spin dependent electronic transitions have demonstrated the ability to produce quantum communication, computing and sensing systems that operate at room temperature. In this project, we will study the potential of using defects in 3C silicon carbide and cubic boron nitride (both wide bandgap materials) for the fabrication of ultrasensitive electromagnetic field detectors. These ultrasensitive detectors can be used in a multitude of versatile applications including brain signal monitoring, GPS-free navigation, and Quantum Light Detection and Ranging (LIDAR). Our initial focus will be on electric field detectors. The literature on quantum sensing of properties 3C-Silicon (the cubic modification of silicon carbide) and cubic boron nitride is sparse or nonexistent. We anticipate that this will significantly contribute to the study of solid-state spins by demonstrating the feasibility of using 3C SiC and cBN in ultrasensitive electric and magnetic field detection. SiC has well-established industrial processes which is expected to enable fast large-scale manufacturing of the proposed devices. Cubic Boron Nitride is an emerging ultra-wide bandgap material, has similar mechanical strength as diamond and can be doped n or p type. This project will also have a major impact in the training of underrepresented minority undergraduate and graduate students at Morgan State University (MSU), K12 students and the public on the concepts and applications of quantum information science. The proposed project will improve the existing research and STEM training infrastructure at MSU significantly by complementing the establishment of a quantum materials research center and a new Ph.D. program in Materials Science with a focus on quantum materials. The findings of the project will be broadly disseminated through publications, conference presentations, and seminars to enhance scientific and technological understanding of ultrasensitive electric and magnetic field detection using defects.To accomplish the objectives in the proposed project, photonic crystal (PhC) structures with high quality (Q) factors (10^3) and small mode volumes will be simulated, designed and fabricated around quantum defects in order to achieve room temperature operation by enhancing PhC cavity resonance coupled defect’s Zero Phonon Line (ZPL) emission. 3C-Silicon carbide material grown on Silicon and purchased from commercial vendors as well as cBN material fabricated on diamond using our in-house growth capability will be used in this project. After growth the defects in wide bandgap materials will be characterized with photoluminescence (PL) and Optically Detected Magnetic Resonance (ODMR). These materials will be fabricated into detectors of our design. The fabricated detectors will be able to detect electric fields in the millivolt m^-1 Hz^-0.5 range and magnetic fields with a sensitivity of nanotesla Hz^-0.5.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.