Research Initiation Award: Light Emitting Siloxene Thin Film

WPCf 2 B J D | X MAC正常 p 5 X ` H p X （# % '0*，0.81 3 5@8： : } D 4 P 不 I. A. 1. a.（1）（a）㈠ a） 不 0个 * * . , 美国 X ` H p X （# % '0*，0.81 3 5@8： : } D 4 P 0个 * * . , 美国 , 3英尺 1 MAC正常 多孔硅的可见光发射自1991年首次报道电化学刻蚀硅的可见光致发光以来一直是研究的热点。这一发现是一个重要的科学突破，因为它潜在的技术意义。这也提出了发光机理的基本问题。尽管对多孔Si的理解仍然模糊不清， 另一种Si相关化合物硅氧烷被发现是具有可见光发射特性的多孔Si样。 本项目基于我们实验室目前对多孔硅、硅氧烷和硅氧烷薄膜的研究活动。 我们建议开发新的硅氧烯薄膜沉积方案和相关的发光器件（LED）结构。 显影这种薄膜的优点是 避免了现有多孔阳极氧化方法的局限性， Si.最终，基于硅氧烷薄膜的LED结构可以实现为大尺寸平板显示器。***

WPCf 2 B J d | x MACNormal p 5 X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P T I. A. 1. a.(1)(a) i) a) T 0 * * . , US X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P 0 * * . , US , 3 ' 1 MACNormal Zheng 9309438 Visible light emission from porous Si has been a research focus since 1991, when the visible photoluminescence from the electrochemically etched Si was first reported. This discovery was an important scientific breakthrough, because of its potential technological implications. It also raises the fundamental question of light emitting mechanism. Despite the still obscure understanding of porous Si, another Si related compound, siloxene, was found to be porous Si like with visible light emission characteristics. This proposed project is based on the current research activity on porous Si, siloxene and siloxene thin films in our laboratory. We propose to develop new thin film deposition schemes for siloxene thin films and the related light emitting device (LED) structures. The advantage of developing such thin films is to avoid the limitation from the current electrochemical anodization method with porous Si. Ultimately, the LED structure based on the siloxene thin film could be implemented to the large scale flat panel display. ***