Research Initiation Award: Light Emitting Siloxene Thin Film

* * * * * * * * * * * * * * * * * * * *81 3 5@8::} d 4 p . i. a . 1；a.(1)(a) i) a) T 0 * *。,我们X ' h p X (# % '0*,；81 3 5@8:：} d 4 p 0 * *。,我们​,3 ' 1 mac正常自1991年首次报道电化学蚀刻硅的可见光发光以来，多孔硅的可见光发射一直是研究的焦点。这一发现是一项重要的科学突破，因为它具有潜在的技术意义。这也提出了发光机理的基本问题。尽管人们对多孔硅的认识还很模糊，但另一种与硅相关的化合物硅氧烷被发现是具有可见光发射特性的多孔类硅。本课题是基于我们实验室目前对多孔硅、硅氧烷和硅氧烷薄膜的研究活动。我们建议开发新的硅氧烷薄膜和相关发光器件（LED）结构的薄膜沉积方案。开发这种薄膜的优点是避免了目前多孔硅电化学阳极氧化方法的局限性。最终，基于硅氧烷薄膜的LED结构可以应用于大规模平板显示。* * *

WPCf 2 B J d | x MACNormal p 5 X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P T I. A. 1. a.(1)(a) i) a) T 0 * * . , US X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P 0 * * . , US , 3 ' 1 MACNormal Zheng 9309438 Visible light emission from porous Si has been a research focus since 1991, when the visible photoluminescence from the electrochemically etched Si was first reported. This discovery was an important scientific breakthrough, because of its potential technological implications. It also raises the fundamental question of light emitting mechanism. Despite the still obscure understanding of porous Si, another Si related compound, siloxene, was found to be porous Si like with visible light emission characteristics. This proposed project is based on the current research activity on porous Si, siloxene and siloxene thin films in our laboratory. We propose to develop new thin film deposition schemes for siloxene thin films and the related light emitting device (LED) structures. The advantage of developing such thin films is to avoid the limitation from the current electrochemical anodization method with porous Si. Ultimately, the LED structure based on the siloxene thin film could be implemented to the large scale flat panel display. ***