Research Initiation Award: Light Emitting Siloxene Thin Film

WPCF 2 B J d|x MACNormal p 5X`h p x(#%‘0*，.81 35@8：：}D 4 P T I.A.1.(1)(A)i)a)T 0**.，我们X`h p x(#%‘0*，.81 3 5@8：：}D 4 P0**。，我们，3‘1 MACNormal郑9309438自1991年以来一直是多孔硅可见光发射的研究热点，首次报道了电化学刻蚀硅的可见光致发光。这一发现是一项重要的科学突破，因为它具有潜在的技术意义。它还提出了发光机制的根本问题。尽管对多孔硅的认识仍然很模糊，但另一种与硅相关的化合物硅氧烷被发现是具有可见光发射特性的类多孔硅。本项目是基于本实验室对多孔硅、硅氧烷和硅氧烷薄膜的研究现状而提出的。我们建议开发用于硅氧烷薄膜和相关发光器件(LED)结构的新的薄膜沉积方案。开发这种薄膜的优点是避免了目前的多孔硅电化学阳极氧化方法的局限性。最终，基于硅氧烷薄膜的LED结构可以应用于大规模平板显示器。***

WPCf 2 B J d | x MACNormal p 5 X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P T I. A. 1. a.(1)(a) i) a) T 0 * * . , US X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P 0 * * . , US , 3 ' 1 MACNormal Zheng 9309438 Visible light emission from porous Si has been a research focus since 1991, when the visible photoluminescence from the electrochemically etched Si was first reported. This discovery was an important scientific breakthrough, because of its potential technological implications. It also raises the fundamental question of light emitting mechanism. Despite the still obscure understanding of porous Si, another Si related compound, siloxene, was found to be porous Si like with visible light emission characteristics. This proposed project is based on the current research activity on porous Si, siloxene and siloxene thin films in our laboratory. We propose to develop new thin film deposition schemes for siloxene thin films and the related light emitting device (LED) structures. The advantage of developing such thin films is to avoid the limitation from the current electrochemical anodization method with porous Si. Ultimately, the LED structure based on the siloxene thin film could be implemented to the large scale flat panel display. ***